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Measurement of Ultrafast Melting and Regrowth Velocities in Pulsed Laser Heated Silicon

Published online by Cambridge University Press:  22 February 2011

Philip H. Bucksbaum  and
Jeffrey Bokor
Philip H. Bucksbaum
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974;
Jeffrey Bokor
Affiliation:
AT&T Bell Laboratories, Hoimoel, New Jersey 07733
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Abstract

Direct measurements of the liquid/solid interface veiocity have been made during both melt-in and regrowth for puised (20 psec) ultraviolet lasei irradiation or crystailine silicon. The regrowth velocity was 25 m/sec, independent or laser fluence. Regrowtn velocities of 50 to 100 m/sec are expected from heat diffusion calculations which neglect undercooling, whereas the inclusion of an appropriate undercooling curve brings the calculation into good agreement with the data. Tne liquid films produced were up to 40 nm thick and were fully amorphized on resoliaificaion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 93
Copyright
Copyright © Materials Research Society 1984

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References

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