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Measurement of Transit Time and Carrier Velocity Under High Electric Field in III-Nitride P-I-N Diodes

Published online by Cambridge University Press:  15 March 2011

M. Wraback ,
H. Shen ,
J.C. Carrano ,
T. Li  and
J.C. Campbell
M. Wraback
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Road, Adelphi, MD 20783
H. Shen
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Road, Adelphi, MD 20783
J.C. Carrano
Affiliation:
Photonics Research Center, Department of Electrical Engineering and Computer Science, U.S. Military Academy, West Point, NY 10996
T. Li
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J.C. Campbell
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

We present an optically-detected time-of-flight technique with femtosecond resolution that monitors the change in the electroabsorption due to charge transport in a p-i-n diode, and show how it may be used to determine the electron transit time and velocity-field characteristic in GaN at room temperature. The transit time drops with increasing electric field E in the intermediate field regime (50-100kV/cm), and the electron velocity possesses a weak, quasi-linear dependence on E attributed to polar optical phonon scattering. In the high field regime the transit time and the electron velocity gradually become independent of E. The peak electron velocity of 1.9×107 cm/sec, corresponding to a transit time of ∼2.5 ps across the 0.53 μm depletion region, is attained at ∼ 225 kV/cm. The experimental results are in qualitative agreement with theoretical steady-state velocity-field characteristics found in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T5.1.1
Copyright
Copyright © Materials Research Society 2000

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References

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