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Measurement of the Temperature Dependence of Silicon Recombination Lifetimes

Published online by Cambridge University Press:  10 February 2011

S. Johnston  and
R. K. Ahrenkiel
S. Johnston
Affiliation:
Department of Materials Science, Colorado School of Mines, Golden, CO 80401
R. K. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

Lifetime spectroscopy is a valuable tool in a number of silicon-based technologies. Currently, lifetime measurement is the most sensitive diagnostic for identification of lowlevel metal impurities in silicon by using the ratio of high-injection to low-injection lifetime. When a single impurity dominates recombination, the lifetime as a function of injection level provides a measure of the defect concentration. Another measurement parameter, that has not been commonly used, is the lifetime as a function of temperature. Temperaturedependent lifetime analysis leads to a better understanding of trapping-delayed recombination rates, trapping and recombination center energy levels and activation energies, temperaturedependent capture cross sections, and surface or grain boundary recombination or trapping effects. A contactless measurement technique has been developed that provides the sample's recombination lifetime over a temperature range from 80 K to 300 K. A sample is coupled to the measurement circuitry that is placed into a Dewar where it is cooled by liquid nitrogen. Lifetimes are then measured as the sample is allowed to warm to room temperature. Data will be shown on these variable-temperature lifetime measurements, which have been made on silicon wafer material ranging from high-quality float-zone-grown wafers to low-cost polycrystalline materials used in photovoltaics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 607
Copyright
Copyright © Materials Research Society 1998

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