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Measurement of the Interfacial Shear Strength of thin Copper Films on Sapphire by Microindentation Experiments

Published online by Cambridge University Press:  15 February 2011

G. Dehm ,
R. Raj  and
M. Rühle
G. Dehm
Affiliation:
Max-Planck-Institut ftir Metallforschung, Institut ftir Werkstoffwissenschaft, Seestrasse 92, 70174 Stuttgart, Germany
R. Raj
Affiliation:
Max-Planck-Institut ftir Metallforschung, Institut ftir Werkstoffwissenschaft, Seestrasse 92, 70174 Stuttgart, Germany
M. Rühle
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca NY 14853-1501, USA
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Abstract

Microindentation experiments were carried out on 500 nm thick films of copper grown on sapphire substrates, containing titanium interlayers of different thicknesses. The films were near single crystal and were grown by molecular beam epitaxy. The width of the titanium interlayers was varied from 0.7nm to I 10nm. The load-displacement data obtained from the indentation experiments was analyzed in terms of a new model. Just 0.7nm of titanium produced a 40% increase in the interfacial shear strength. Further increase in the thickness of the titanium interlayers produced only a slightly larger increase in the interfacial strength, suggesting that the measurement reflected the influence of the atomic bonding at the interface. The technique and the model present a simple way to estimate the relative change in the interfacial strength of metal-ceramic interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 151
Copyright
Copyright © Materials Research Society 1996

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References

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