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Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

S. Mirzakuchaki ,
H. Golestanian ,
E. J. Charlson  and
T. Stacy
S. Mirzakuchaki
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
H. Golestanian
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
E. J. Charlson
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
T. Stacy
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
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Abstract

Although many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 655
Copyright
Copyright © Materials Research Society 1996

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