Hostname: page-component-5c6d5d7d68-xq9c7 Total loading time: 0 Render date: 2024-08-22T19:24:13.338Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement of Phase Boundary Dynamics During Scanned Laser Crystallization of Amorphous Ge Films

Published online by Cambridge University Press:  15 February 2011

R. L. Chapman ,
John C. C. Fan ,
H. J. Zeiger  and
R. P. Gale
R. L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of TechnologyLexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of TechnologyLexington, Massachusetts 02173
H. J. Zeiger
Affiliation:
Lincoln Laboratory, Massachusetts Institute of TechnologyLexington, Massachusetts 02173
R. P. Gale
Affiliation:
Lincoln Laboratory, Massachusetts Institute of TechnologyLexington, Massachusetts 02173
Get access

Abstract

Two techniques have been used to measure the velocity of the amorphous-crystalline boundary during scanned laser crystallization of amorphous Ge films on fused-silica substrates. Values in the vicinity of 200 cm sec-1 have been measured by both methods. The results obtained by the first technique, an optical transmission method, confirm our theoretical model for the periodic motion of the boundary. The measurements made by the second technique, which is based on an examination of the structural features obtained at laser scanning rates up to about 600 cm sec-1 , show the boundary velocity to be rather insensitive to film thickness and background temperature. Controlled crystallization is expected to require stability of the laser beam power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 81
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fan, J. C. C., Zeiger, H. J., Gale, R. P. and Chapman, R. L., Appl. Phys. Lett. 36, 158 (1980).CrossRefGoogle Scholar
2. Zeiger, H. J., Fan, J. C. C., Palm, B. J., Gale, R. P. and Chapman, R. L., in Laser and Electron Beam Processing of Materials, edited by White, C. W. and Peercy, P. S. (Academic Press, New York, 1980), p. 234.Google Scholar
3. Chapman, R. L., Fan, J. C. C., Zeiger, H. J. and Gale, R. P., Appl. Phys. Lett. 37, 292 (1980).CrossRefGoogle Scholar