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Measurement of Nonuniform Stresses in Semiconductors by the Micro-Raman Method

Published online by Cambridge University Press:  10 February 2011

K. Pinardi ,
S. C. Jain ,
H. E. Maes ,
R. Van Overstraeten ,
M. Willander  and
A. Atkinson
K. Pinardi
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, SWEDEN.
S. C. Jain
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
H. E. Maes
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
R. Van Overstraeten
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
M. Willander
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, SWEDEN.
A. Atkinson
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London.
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Abstract

Micro-Raman measurements axe performed with a focused laser beam. Because of its finite diameter (∼ 1 μm) and penetration depth, the laser beam samples a “large volume” of the sample. In a nonuniformly strained sample, spectra originating from different points are different. Therefore the observed spectrum depends on both the strain distribution in the sample and the absorption coefficient of the laser light. We describe a method to calculate the Raman spectra taking these factors into account. The calculated spectra show excellent agreement with the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 507
Copyright
Copyright © Materials Research Society 1998

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References

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