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Measurement of Lattice Relaxation During Epitaxy Using Tunneling Microscopy: Ge on Si(111)

Published online by Cambridge University Press:  15 February 2011

Silva K. Theiss ,
D.M. Chen  and
J.A. Golovchenko
Silva K. Theiss
Affiliation:
Harvard University, Cambridge, MA02138
D.M. Chen
Affiliation:
Rowland Institute for Science, Cambridge, MA02142
J.A. Golovchenko
Affiliation:
Harvard University, Cambridge, MA02138 Rowland Institute for Science, Cambridge, MA02142
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Abstract

We have used the tunneling microscope to measure the lattice relaxation of Ge islands on Si (111) as a function of their height. Lattice constants on the top surfaces of individual Ge islands can be measured with an uncertainty of approximately one percent. The lattice constant is a continuous, Monotonically increasing function of island height up to 20 bilayers. At heights around 5O bilayers, the island-top lattice parameter may exceed that of bulk Ge. Defects can be observed penetrating the top surface of islands which have heights around 90 bilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 15
Copyright
Copyright © Materials Research Society 1994

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