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Measurement of Grain Boundary Parameters by Laser-Spot Photoconductivity

Published online by Cambridge University Press:  15 February 2011

E. Poon ,
H.L. Evans ,
W. Hwang ,
R.M. Osgood Jr.  and
E.S. Yang
E. Poon
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
H.L. Evans
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
W. Hwang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
R.M. Osgood Jr.
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
E.S. Yang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 10027
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Abstract

An experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GBs) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. Both the steady-state and transient signals are recorded as functions of temperature. From these data, we obtain well-defined GB parameters, including the barrier height, interface charge density, trap energy and thermal capture cross-section. This technique allows us to examine localized regions of individual GBs in a semiconductor with multiple grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 103
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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