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Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method

Published online by Cambridge University Press:  10 February 2011

H. J. Peng ,
S. P. Wong ,
W. F. Lau ,
N. Ke  and
Shounan Zhao
H. J. Peng
Affiliation:
The Chinese University of Hong Kong, Department of Electronic Engineering, Shatin, N.T.,Hong Kong, China
S. P. Wong
Affiliation:
The Chinese University of Hong Kong, Department of Electronic Engineering, Shatin, N.T.,Hong Kong, China
W. F. Lau
Affiliation:
The Chinese University of Hong Kong, Department of Electronic Engineering, Shatin, N.T.,Hong Kong, China
N. Ke
Affiliation:
The Chinese University of Hong Kong, Department of Electronic Engineering, Shatin, N.T.,Hong Kong, China
Shounan Zhao
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
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Abstract

Silicon high-power devices are commonly bonded to Mo electrodes using Al films. Bonding stress will inevitably be introduced into the Si substrate by such a process. In this work, the infrared (IR) photoelasticity (PE) method was employed to measure the stress distribution in the Si substrates induced by high temperature bonding process of Si/Al/Mo structures commonly used in the production of silicon thyristors. It is demonstrated that quantitative information on both the directions and magnitudes of the stress can be obtained. The dependence of the magnitude of the stress on the geometrical parameters of the structure has also been studied. The experimental results are shown to agree well with the calculated results derived from a theory of interlaminar stresses in composites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 303
Copyright
Copyright © Materials Research Society 1999

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