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The mean inner potential of GaN measured from nanowires using off-axis electron holography

Published online by Cambridge University Press:  01 February 2011

Andrew See Weng Wong
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, Pembroke Street, New Museum Site, Cambridge, Cambridgeshire, CB23QZ, United Kingdom, 44-(0)1223-334368
Ghim Wei Ho
Affiliation:
[email protected], University of Cambridge, Nanoscience Center, United Kingdom
Rafal E Dunin-Borkowski
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, United Kingdom
Takeshi Kasama
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, United Kingdom
Rachel A Oliver
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, United Kingdom
Pedro MFJ Costa
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, United Kingdom
Colin John Humphreys
Affiliation:
[email protected], University of Cambridge, Materials Science and Metallurgy, United Kingdom
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Abstract

The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7 ± 0.3) V is obtained from these samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Dunin-Borkowski, R.E., McCartney, M.R., Smith, D.J., Electron holography of nanostructured materials in: Nalwa, H.S. (Ed.), Encyclopaedia of Nanoscience and Nanotechnology, Vol 3, American Scientific Publishers, Stevenson Ranch, CA, (2004).Google Scholar
2. Tonomura, A., Allard, L.F., Pozzi, G., Joy, D.C. and Ono, Y.A. (Eds.), Electron holography, Elsevier, Amsterdam, (1995).Google ScholarPubMed
3. Völkl, E., Allard, L.F. and Joy, D.C. (Eds.), Introduction to Electron Holography, Plenum, New York, (1998).Google Scholar
4. Takeguchi, M., McCartney, M.R. and Smith, D.J., Appl. Phys. Lett. 84, 2103 (2004).CrossRefGoogle Scholar
10. Stevens, M., Bell, A., McCartney, M.R., Ponce, F.A., Marui, H. and Tanaka, S., Appl. Phys. Lett. 85, 4651 (2004).CrossRefGoogle Scholar
5. Li, J., McCartney, M.R., Dunin-Borkowshi, R.E., and Smith, D.J., Acta Cryst. A 55, 652 (1999).CrossRefGoogle Scholar
6. Gajdardziska-Josifovska, M., McCartney, M.R., de Ruijter, W.J., Smith, D.J., Weiss, J.K. and Zuo, J.M., Ultramicroscopy 50, 285 (1993).CrossRefGoogle Scholar
7. McCartney, M.R., Gribelyuk, M.A., Li, J., Rosheim, P., McMurray, J.S. and Smith, D.J., Appl. Phys. Lett. 80, 3213 (2002).CrossRefGoogle Scholar
8. Dunin-Borkowski, R.E., Newcomb, S.B., Kasama, T., McCartney, M.R., Weyland, M. and Midgley, P.A., Ultamicroscopy 103, 67 (2005).CrossRefGoogle Scholar
9. Barnard, J.S., Kappers, M.J., Thrush, E.J. and Humphreys, C.J., in Microscopy of Semiconducting Materials 2003, Inst. of Physics, Bristol and Philadelphia, 281 (2003).Google Scholar