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MBE-Grown IV-VI Semiconductor Structures for Thermal Conductivity Measurements

Published online by Cambridge University Press:  06 March 2012

Patrick J. McCann ,
Leonard Olona ,
Zhihua Cai ,
James D. Jeffers  and
Khosrow Namjou
Patrick J. McCann
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK
Leonard Olona
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK
Zhihua Cai
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK
James D. Jeffers
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK
Khosrow Namjou
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK
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Abstract

IV-VI semiconductor structures grown by molecular beam epitaxy (MBE) have been used to measure the cross-plane thermal conductivity of PbSe and PbSe/PbSnSe/PbSe multiperiod superlattice (SL) materials. Continuous wave photoluminescence (PL) measurements were used to determine epilayer temperatures localized to multiple quantum well (MQW) light emitting layers on top of various IV-VI materials structures. These data combined with finite element analysis (FEA) were used to extract cross-plane thermal conductivity values for different materials designs. Structures consisting of PbSe/PbSnSe/PbSe SL materials with multiple periodicities exhibited cross-plane lattice thermal conductivity values as low as 0.30 W/mK, a significant reduction relative to the 1.9 W/mK value for bulk PbSe. This work shows that lattice thermal conductivity reduction offers a highly viable approach for improving thermoelectric materials performance.

Keywords

epitaxythermoelectricthermal conductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1404: Symposium W – Phonons in Nanomaterials–Theory, Experiments and Applications , 2012 , mrsf11-1404-w04-05
Copyright
Copyright © Materials Research Society 2012

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References

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