Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:40:12.293Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE-Grown GaNAsBi Matched to GaAs with 1.3-μm Emission Wavelength

Published online by Cambridge University Press:  26 February 2011

Masahiro Yoshimoto ,
Wei Huang  and
Kunishige Oe
Masahiro Yoshimoto
Affiliation:
Cooperative Research Center, Kyoto Institute of Technology
Wei Huang
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Sakyo, Kyoto, 606–8585, Japan
Kunishige Oe
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Sakyo, Kyoto, 606–8585, Japan
Get access

Abstract

GaNyAs1-x-yBix alloy lattice-matched to GaAs has been grown by molecular beam epitaxy (MBE). The lattice-matching of GaNyAs1-x-yBix to GaAs was investigated by X-ray diffraction measurements on a series of GaNyAs1-x-yBix with various GaN molar fractions. GaNyAs1-x-yBix lattice-matched to GaAs was obtained, which was confirmed by its diffraction peak overlapped with the peak of GaAs. Photoluminescence (PL) of 1.3 μm was observed from GaNyAs1-x-yBix epilayer matched to GaAs at room temperature. The temperature coefficient of the PL peak energy in a temperature range 150–300K for GaNyAs1-x-yBix was 1/3 of InGaAsP with a bandgap corresponding to 1.3-μm emission. Both lattice-matching to GaAs and bandgap adjustment to 1.3-μm waveband were achieved for GaNyAs1-x-yBix for the first time. This alloy will lead to the fabrication of laser diodes with an emission of temperature insensitive wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B11.6
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Oe, K. and Asai, H., Symp. Record Electronic Materials Symp., Izunagaoka, 1995, p. 191.Google Scholar
2. Oe, K., Jpn. J. Appl. Phys. 41, 2801 (2002).Google Scholar
3. Yoshimoto, M., Murata, S., Chayahara, A., Horino, Y., Saraie, J. and Oe, K., Jpn. J. Appl. Phys. 42, L1235 (2003).Google Scholar
4. Tixier, S., Adamcyk, M., Tiedje, T., Francoeur, S., Mascarenhas, A., Wei, P. and Schiettekatte, F., Appl. Phys. Lett. 82, 2245 (2003).Google Scholar
5. Yoshida, J., Kita, T., Wada, O. and Oe, K., Jpn. J. Appl. Phys. 42, 371 (2003).Google Scholar
6. Yoshimoto, M., Huang, W., Takehara, Y., Saraie, J., Chayahara, A., Horino, Y. and Oe, K., Jpn. J. Appl. Phys. 43, L845 (2004).Google Scholar
7. Yoshimoto, M., Huang, W., Takehara, Y., Saraie, J., Chayahara, A., Horino, Y. and Oe, K., Proc. 16th Int. Conf. Indium Phosphide and Related Materials, Kagoshima, Japan IEEE Cat. No. 04CH37589, (IEEE, New York, 2004) p. 501.Google Scholar
8. Huang, W., Yoshimoto, M., Takehara, Y., Saraie, J. and Oe, K., Jpn. J. Appl. Phys. 43, L1350 (2004).Google Scholar
9. Spruytte, S. G., Coldren, C. W., Harris, J. S., Wampler, W., Krispin, P., Ploog, K. H. and Larson, M. C., J. Appl. Phys. 89, 4401 (2001).Google Scholar
10. Rao, E. V., Ougazzaden, A., Le Bellego, Y. and Juhel, M., Appl. Phys.Lett. 72, 1409 (1998).Google Scholar
11. Xin, H. P., Kavanagh, K. L., Kondow, M. and Tu, C. W., J. Cryst. Growth 201, 419 (1999).Google Scholar
12. Oe, K. and Okamoto, H., Jpn. J. Appl. Phys. 37, L1283 (1998).Google Scholar
13. Yamazoe, Y., Nishino, T. and Hamakawa, Y., IEEE J. Quantum Electron. 17, 139 (1981).Google Scholar
14. Vurgaftman, I. and Meyer, J. R., J. Appl. Phys. 94, 3675 (2003).Google Scholar