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MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

Published online by Cambridge University Press:  28 February 2011

H. ZOGG ,
P. MAIER  and
P. NORTON
H. ZOGG
Affiliation:
Swiss Federal Institute of Technology, AFIF, CH-8093 Zürich, Switzerland
P. MAIER
Affiliation:
Swiss Federal Institute of Technology, AFIF, CH-8093 Zürich, Switzerland
P. NORTON
Affiliation:
Fraunhofer Institut f. phys. Messt., D-7800 Freiburg, Fed. Rep. of Germany
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Abstract

Graded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 253
Copyright
Copyright © Materials Research Society 1986

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