Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-20T01:47:47.770Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

Published online by Cambridge University Press:  28 February 2011

H. ZOGG ,
P. MAIER  and
P. NORTON
H. ZOGG
Affiliation:
Swiss Federal Institute of Technology, AFIF, CH-8093 Zürich, Switzerland
P. MAIER
Affiliation:
Swiss Federal Institute of Technology, AFIF, CH-8093 Zürich, Switzerland
P. NORTON
Affiliation:
Fraunhofer Institut f. phys. Messt., D-7800 Freiburg, Fed. Rep. of Germany
Get access

Abstract

Graded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 253
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Farrow, R.F.C., Sullivan, P.W., Williams, G.M., Jones, G.R., Cameron, D.C., J. Vac. Sci. Technol. 19, 415, 1981.CrossRefGoogle Scholar
[2] Asano, T., Ishiwara, H., Jap. J. Appl. Phys. Suppl 21-1, 187, 1982.Google Scholar
[3] Siskos, S., Fontaine, C., Munoz-Yague, A., Appl. Phys. Lett. 44, 1146, 1984.CrossRefGoogle Scholar
[4] Phillips, J. M., Augustynjak, W. M., Proc. Mat. Res. Soc. Meeting, Boston, Dec. 1985, to be published.Google Scholar
[5] Asano, T., Kuriyama, Y., Ishiwara, H., Electron. Lett. 24, 386, 1985.Google Scholar
[6] Onoda, H., Katoh, T., Hirashita, N., Sasaki, M., Techn. Digest IEDM, Washington D.C. Dec. 1985, p. 680.Google Scholar
[7] Schowalter, L.J., Fathauer, R.W., AVS nat. Symp., Nov. 1985, to be published.Google Scholar
[8] Zogg, H., Vogt, W., Melchior, H., Infrared Phys. 25, 333, 1985.CrossRefGoogle Scholar
[91 Zogg, H., HUppi, M., Appl. Phys. Lett. 47, 133, 1985.CrossRefGoogle Scholar
[10] Holloway, H., Phys. Thin Films 11, 105, 1981.Google Scholar
[11] Zogg, H., Norton, P., Techn. Digest IEDM, Washington D.C. Dec. 1985, p. 121.Google Scholar
[12] Sullivan, P.W., Farrow, R.F.C., Jones, G.R., J. Cryst. Growth 60, 403, 1982.CrossRefGoogle Scholar
[13] Zogg, H., Vogt, W., Melchior, H., Proc. SPIE 587, to be published.Google Scholar
[14] Zogg, H., Maier, P., Ospelt, M., Thin Solid Films 129, 329, 1985.Google Scholar
[15] Hashimoto, S., Peng, J.-L., Gibson, W.M., Schowalter, L.J., Fathauer, R.W., Appl. Phys. Lett. 47, 1071, 1985.CrossRefGoogle Scholar