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MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

Published online by Cambridge University Press:  10 February 2011

A D Johnson ,
R Jefferies ,
G J Pryce ,
J A Beswick ,
T Ashley ,
J Newey ,
C T Elliot  and
T Martin
A D Johnson
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
R Jefferies
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
G J Pryce
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
J A Beswick
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
T Ashley
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
J Newey
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
C T Elliot
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
T Martin
Affiliation:
DRA Malvern, St. Andrews Road, Great Malvern, WR14 3PS, UK.
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Abstract

We report on the optimum growth conditions for Molecular Beam Epitaxy (MBE) growth of InSb onto InSb (111)A and (111)B substrates. It was found that for (111)A substrates the optimum epilayer morphology was obtained for growth temperatures above 385°C and with a Sb:In ratio of 1.5:1. In contrast, for the (111)B surface, best morphology was found for growth temperatures above 385°C but with V:III ratio of ∼7.0:1. In both cases the dopant incorporation was found to be the same as the (100) surface and did not particularly depend either on V:III ratio or substrate temperature. We also describe the device characteristics of InAlSb light emitting diodes (LEDs) grown lattice matched onto ternary InGaSb(111)A substrates using the optimized growth conditions obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 103
Copyright
Copyright © Materials Research Society 1997

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References

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