Hostname: page-component-f554764f5-fnl2l Total loading time: 0 Render date: 2025-04-19T11:18:55.851Z Has data issue: false hasContentIssue false
  • English
  • Français

MBE Growth of (In)GaN for LED Applications

Published online by Cambridge University Press:  10 February 2011

H. Riechert ,
R. Averbeck ,
A. Graber ,
M. Schienle ,
U. Strauβ  and
H. Tews
H. Riechert
Affiliation:
Siemens Corporate Research and DevelopmentD-81730 Munich, Germany
R. Averbeck
Affiliation:
Siemens Corporate Research and DevelopmentD-81730 Munich, Germany
A. Graber
Affiliation:
Siemens Corporate Research and DevelopmentD-81730 Munich, Germany
M. Schienle
Affiliation:
Siemens Corporate Research and DevelopmentD-81730 Munich, Germany
U. Strauβ
Affiliation:
Siemens Corporate Research and DevelopmentD-81730 Munich, Germany
H. Tews
Affiliation:
Siemens Corporate Research and DevelopmentD-81730 Munich, Germany
Get access

Abstract

We report on essential aspects of the growth of InGaN / GaN p-n junctions by gas-source molecular beam epitaxy (MBE) and present the first blue and green electroluminescence from such structures grown entirely by MBE.

A study of the growth conditions for a GaN nucleation layer on sapphire and for the subsequent growth of undoped GaN points out the necessity for Ga-stabilized growth. Unintentionally doped GaN grown at 1 μm/h shows background doping levels below 1017 cm-3 and mobilities up to 320 cm2/Vsec (at 300K). Narrow photoluminescence with very low intensity in the yellow spectral range is observed. N- and p-type doping of GaN with Si and Mg yields layers with high mobilities (220 and 10 cm2/Vsec, respectively at 300K) at carrier densities typical for devices.

Although incorporation of Indium is strongly temperature-dependent, InGaN-layers with In-contents of over 40% are obtained routinely. The optical properties of our InGaN layers typically exhibit the commonly observed, broad deep level luminescence. Finally, we present electroluminescence in the visible spectral range up to 540 nm from InGaN / GaN double-heterojunctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 149
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Moustakas, T. D., Molnar, R. J., Lei, T., Menon, G. and Eddy, C. R. Jr., Mat. Res. Soc. Symp. Proc. 242, 427 (1992)Google Scholar
[2] Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T. and Mukai, T., Jpn. J. Appl. Phys. 34, L 797 (1995)Google Scholar
[3] Sakai, H., Koike, T., Suzuki, H., Yamaguchi, M., Yamasaki, S., Koike, M., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 34, L 1431 (1995)Google Scholar
[4] Schetzina, J. F., Mat. Res. Soc. Proc. 395, 123 (1995)Google Scholar
[5] Vaudo, R. P.. Cook, J. W. Jr. And Schetzina, J. F., J. Vac. Sci. Technol. B 12, 1232 (1994)Google Scholar
[6] Liu, H., Frenkel, A. C., Kim, J. G. and Park, R. M., J. Appl Phys. 74 (10), 6124 (1993)Google Scholar
[7] Heinlein, C., Grepstad, J., Riechert, H. and Averbeck, R., to appear in Materials Science and Engineering B (1996)Google Scholar
[8] Heying, B., Wu, X. H., Keller, S., Li, Y., Kapolnek, D., Keller, B. P., DenBaars, S. P. and Speck, J. S., Appl. Phys. Lett. 68 (5), 643 (1996)Google Scholar
[9] Molnar, R. J., Lei, T. and Moustakas, T. D., Appl. Phys. Lett. 62 (1), 72 (1993)Google Scholar
[10] Botchkarev, A., Salvador, A., Sverdlov, B., Myoung, J. and Morkoc, H., J. Appl. Phys. 77 (9), 4455 (1995)Google Scholar
[11] Ambacher, O., unpublished resultsGoogle Scholar
[12] Volm, D. et al., Phys. Rev. B 53, 16543 (1996)Google Scholar
[13] Rode, D. L. and Gaskill, D. K., Appl. Phys. Lett. 66 (15), 1972 (1995)Google Scholar
[14] Neugebauer, J. private communication, see also Neugebauer, J. and van de Walle, C. G., in ‘Role of defects and impurities in doping of GaN’, edited by Scheffler, M. and Zimmermann, R. (Proc. 23rd Int. Conf. on the Physics of Semiconductors, Singapore 1996) p. 2849–2856.Google Scholar
[15] Götz, W., Johnson, N. M., Walker, J., Bour, D. P. and Street, R. A., Appl, Phys. Lett. 68 (5), 667 (1996)Google Scholar
[16] Ambacher, O., Bergmaier, A., Brandt, M. S., Dimitrov, R., Dollinger, G., Fischer, R. A., Miehr, A., Metzger, T. and Stutzmann, M., to appear in J. Vac. Sci. Technol. (1996)Google Scholar
[17] Nakamura, S., J. Vac. Sci. Technol. A 13 (3), 705 (1995)Google Scholar
[18] Tews, H., Averbeck, R., Graber, A. and Riechert, H., Electron. Lett. 32 (21), 2004 (1996)Google Scholar