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MBE Growth of GaN on NdGaO3 (101)

Published online by Cambridge University Press:  10 February 2011

C. Fechtmann ,
V. Kirchner ,
S. Einfeldt ,
H. Heinke ,
D. Hommel ,
T. Lukasiewicz ,
Z. Luczynski  and
J. Baranowski
C. Fechtmann
Affiliation:
Institute of Solid State Physics, University of Bremen, Kufsteiner Straße NW1, 28359 Bremen, GERMANY
V. Kirchner
Affiliation:
Institute of Solid State Physics, University of Bremen, Kufsteiner Straße NW1, 28359 Bremen, GERMANY
S. Einfeldt
Affiliation:
Institute of Solid State Physics, University of Bremen, Kufsteiner Straße NW1, 28359 Bremen, GERMANY
H. Heinke
Affiliation:
Institute of Solid State Physics, University of Bremen, Kufsteiner Straße NW1, 28359 Bremen, GERMANY
D. Hommel
Affiliation:
Institute of Solid State Physics, University of Bremen, Kufsteiner Straße NW1, 28359 Bremen, GERMANY
T. Lukasiewicz
Affiliation:
Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01–919 Warsaw 118, POLAND
Z. Luczynski
Affiliation:
Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01–919 Warsaw 118, POLAND
J. Baranowski
Affiliation:
Institute of Experimental Physics, Warsaw University, Hozia 69, 00–681 Warsaw, POLAND
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Abstract

We report on the growth of GaN on NdGaO3 (101) by plasma assisted molecular beam epitaxy (MBE). NdGaO3 (101) is an interesting alternative substrate compared to A12O3 due to its smaller lattice mismatch of +1.2 % to hexagonal (0001) GaN. Using photoluminescence (PL), X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) the optical and structural properties of the GaN thin films grown on NdGaO3 are investigated and compared to those grown on c-plane sapphire. The intended epitaxial relationship of [0001] GaN ║ [101] GaN is hard to realise as confirmed by several tilted or even polycrystalline films. However, the layer quality was found to improve considerably, when the NdGaO3 surface showed a (l × 1) instead of other reconstructions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 295
Copyright
Copyright © Materials Research Society 1998

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