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MBE Growth of GaAs on Si through Direct Ge Buffers

Published online by Cambridge University Press:  01 February 2011

Xiaojun Yu ,
Yu-Hsuan Kuo ,
Junxian Fu  and
James S Harris Jr
Xiaojun Yu
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305 Solid State and Photonics Lab.Stanford University, CISX 126, 420 Via Ortega, Stanford, CA 94305
Yu-Hsuan Kuo
Affiliation:
Solid State and Photonics Lab.Stanford University, CISX 126, 420 Via Ortega, Stanford, CA 94305
Junxian Fu
Affiliation:
Solid State and Photonics Lab.Stanford University, CISX 126, 420 Via Ortega, Stanford, CA 94305
James S Harris Jr
Affiliation:
Solid State and Photonics Lab.Stanford University, CISX 126, 420 Via Ortega, Stanford, CA 94305
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Abstract

The result of GaAs growth on Si using a thin Ge buffer layer (about 0.5μm thick) is presented in this paper. A two-step method with a high temperature anneal between two steps is used to grow the Ge buffer layer. Single phase GaAs is grown on Ge by controlling the growth temperature, substrate miscut and the prelayers. No APD defect is observed by the XTEM and the threading dislocation density of GaAs grown using this method is about 5˜10×107cm-2. The PL intensity of GaAs is 10× less on Si substrate than on GaAs substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 869: Symposium D – Materials, Integration and Technology for Monolithic Instruments , 2005 , D4.5
Copyright
Copyright © Materials Research Society 2005

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