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MBE Growth of GaAs on Si: Problems and Progress

Published online by Cambridge University Press:  25 February 2011

Herbert Kroemer
Herbert Kroemer*
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Abstract

Several fundamental problems are reviewed that must be solved if GaAs on Si growth is to be achieved with device-quality already close to the GaAs/Si interface, rather than relying on thick buffer layers: (a) antiphase disorder, (b) interface charge and cross-doping, and (c) misfit dislocations. An extensive discussion is given of the mechanism by which antiphase disorder is suppressed on (100)-oriented substrates

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 3
Copyright
Copyright © Materials Research Society 1986

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