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Mbe Growth and Thermoelectric Properties OF Bi2Te3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Sunglae Cho ,
Yunki Kim ,
Antonio DiVenere ,
George K. L. Wong ,
Jerry R. Meyer  and
John B. Ketterson
Sunglae Cho
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Yunki Kim
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Antonio DiVenere
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
George K. L. Wong
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Jerry R. Meyer
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375–5338
John B. Ketterson
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
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Abstract

We have grown high quality Bi2Te3 thin films on CdTe(111)B substrates using MBE. Structural properties have been investigated using in-situ reflection high-energy electron diffraction (RHEED) and θ-2θ X-ray diffraction analysis. They show that Bi2Te3films on CdTe(111) grow along the (00.l) in the hexagonal cell with a layer-by-layer growth mode, resulting in a smooth surface, and an X-ray Bragg peak FWHM of 0.2°. The thermopower and electrical conductivity of the stoichiometric Bi2Te3 films were ∼200 μV/K and 103(Ωcm)−1, respectively, comparable to the single crystal bulk values. We have observed the antisite defect effect in Te-rich Bi2Te3films: excess Te occupies Bi lattice sites and behaves as an n-type dopant. Crystallinity and transport properties are strongly affected by non-stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 183
Copyright
Copyright © Materials Research Society 1999

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References

1. Shing, Y. H., Chang, Y., Mirshafii, A., Hayashi, L., Roberts, S. S., Josefowicz, J. Y., and Tran, N., J. Vac. Sci. Technol. A 1, 503 (1983).CrossRefGoogle Scholar
2. Noro, H., Sato, K., and Kagechika, H., J. Appl. Phys. 73, 1252 (1993).Google Scholar
3. Dauscher, A., Thomy, A., and Scherrer, H., Thin Solid Films 280, 61 (1996).Google Scholar
4. Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., and El-Masry, N., J. Cryst. Growth 170, 817 (1997).CrossRefGoogle Scholar
5. Charles, E., Groubert, E., and Boyer, A., J. Mater. Sci. Lett. 7, 575 (1988).Google Scholar
6. Boyer, A. and Cisse, E., Mater. Sci. Eng. B 13, 103 (1992).Google Scholar
7. Harman, T. C.. Miller, S. E. Goeing, H. L., Bull. Amer. Phys. Soc. 30, 35 (1955).Google Scholar
8. Cho, S., DiVenere, A., Wong, G. K., Ketterson, J. B., Meyer, J. R., and Hoffman, C. A., Solid State Commun. 102, 673 (1997).Google Scholar