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MBE Growth and Properties of Wide Band-Gap II-VI Strained-Layer Superlattice

Published online by Cambridge University Press:  25 February 2011

Hailong Wang ,
Jie Cui ,
Aidong Shen ,
Liang Xu ,
Yunliang Chen  and
Yuhua Shen
Hailong Wang
Affiliation:
Shanghai Institute of Optics and Fine Mechanical, Academia Sinica P.O. Box 800–216 Shanghai 201800, P.R. China
Jie Cui
Affiliation:
Shanghai Institute of Optics and Fine Mechanical, Academia Sinica P.O. Box 800–216 Shanghai 201800, P.R. China
Aidong Shen
Affiliation:
Shanghai Institute of Optics and Fine Mechanical, Academia Sinica P.O. Box 800–216 Shanghai 201800, P.R. China
Liang Xu
Affiliation:
Shanghai Institute of Optics and Fine Mechanical, Academia Sinica P.O. Box 800–216 Shanghai 201800, P.R. China
Yunliang Chen
Affiliation:
Shanghai Institute of Optics and Fine Mechanical, Academia Sinica P.O. Box 800–216 Shanghai 201800, P.R. China
Yuhua Shen
Affiliation:
Shanghai Institute of Optics and Fine Mechanical, Academia Sinica P.O. Box 800–216 Shanghai 201800, P.R. China
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Abstract

The (ZnSe) /(ZnS ), strained layer super-lattices (SLSs) on (100) GaAs and (ZnTe)/(ZnSe) SLSs on (100) InP have been grown by molecular beam epitaxy (MBE) and atomic layer epitaxy (ALE). The structural characteristics of these SLSs were investigated in situ RHEED observation, low-angle X-ray diffraction spectra, TED image and AES analysis. The optical properties of the SLSs, such as refractive index of superlattice materials, photoluminescence (PL) spectra, transient PL spectra, Raman spectra, far-infrared reflectivity spectra and Optical nonlinear have been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 227
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1]. Hen, J., Powers, K. A. et. al., Appl. Phpys. Lett. 57, 1901 (1990).Google Scholar
[2]. Kobayashi, M. et.al., J. Appl. Phys. 61, 1105 (1987).Google Scholar
[3]. Kobayashi, M. et. al., Appl. phys. Lett. 48, 296 (1986).Google Scholar
[4]. Yokogawa, Toshiyn et. al., Appl. Phys. Lett. 52, 120 (1988).CrossRefGoogle Scholar
[5]. Shen, Aidong, Cui, Jie et. al., J. Cryst. Growth 111, 807 (1991).Google Scholar
[6]. Göbel, E. O. et. al., Phys. Rew. Lett. 51, 1588 (1983).Google Scholar
[7]. Londolt-Börnstein, Tables Eds. O. Madelung et. al., Vol. 111/17b.Google Scholar
[8]. Wang, Z. P. et. al., Solid State Commun. 65, 661 (1988).Google Scholar
[9]. Cui, Jie, Wang, Hailong et. al., J. Cryst. Growth 111, 811(1991).CrossRefGoogle Scholar
[10]. Wang, Hailong, Qiu, Peihua et. al., J. Appl. Phys. 68, 4338 (1990).Google Scholar