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Mbe Growth and Characterization of Lwir HgCdTe

Published online by Cambridge University Press:  21 February 2011

M.B. Lee ,
J. Decarlo ,
D. Dimarzio  and
M. Kesselman
M.B. Lee
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714-3580
J. Decarlo
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714-3580
D. Dimarzio
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714-3580
M. Kesselman
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714-3580
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Abstract

We have grown high-mobility LWIR HgCdTe thin films on CdTe substrates, using molecular beam epitaxy (MBE). The structural, optical, and electrical properties of these epilayers were determined by SEM, DCRC, FTIR, and Hall effect measurements. For films of 10 to 11 µm thick and composition X value ranging from 0.152 to 0.172, the highest mobility observed was 7.5 × 105 cm2 /V-sec, and the FWHMs of the rocking curves were 75 to 110 arcsec. We also have carried out the temperature-dependent EXAFS study of HgCdTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 377
Copyright
Copyright © Materials Research Society 1990

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References

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