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Mbe Growth and Characterization of Hgcdte Heterostructures

Published online by Cambridge University Press:  28 February 2011

R.J. Koestner ,
M.W. Goodwin  and
H.F. Schaake
R.J. Koestner
Affiliation:
Texas Instruments, Inc., Central Research Laboratories, Dallas, Tx 75265
M.W. Goodwin
Affiliation:
Texas Instruments, Inc., Central Research Laboratories, Dallas, Tx 75265
H.F. Schaake
Affiliation:
Texas Instruments, Inc., Central Research Laboratories, Dallas, Tx 75265
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Abstract

HgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 397
Copyright
Copyright © Materials Research Society 1990

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References

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