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Mbe Growth and Characterization of (GaAs)l−x(Si2)x and (GaAs)1−x(Si2)x/GaAs Superlattices on GaAs Substrates

Published online by Cambridge University Press:  15 February 2011

H.P. Lee ,
F.J. Szalkowski ,
X. Zeng ,
J. Wolfenstine  and
J. W. Ager III
H.P. Lee
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine 92717
F.J. Szalkowski
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine 92717
X. Zeng
Affiliation:
Department of Electrical and Computer Engineering, University of California, Irvine 92717
J. Wolfenstine
Affiliation:
Department of Chemical and Biochemical Engineering, University of California, Irvine 92717
J. W. Ager III
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, CA. 94707
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Abstract

Lateral compositional graded (GaAs)1-x(Si2)x alloys were deposited on GaAs substrates in a III-V molecular beam epitaxy (MBE) chamber equipped with a electron-beam Si evaporation source. Single crystal GaAs-Si alloys were formed when the deposition temperature was 600°C or higher. The alloys were characterized by Energy Dispersive X-ray Spectroscopy (EDS), Raman scattering measurement and cross-sectional Transmission Electron Microscopy (XTEM). Dislocation-free (GaAs)1-x(Si2)x films of up to x = 0.07 were deposited. For alloys with x between 0.15 < < 0.25, the morphology deteriorates and a high density of stacking faults and micro-twins were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 53
Copyright
Copyright © Materials Research Society 1995

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