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MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison between N-polarity and In-polarity Growth Processes

Published online by Cambridge University Press:  01 February 2011

Akihiko Yoshikawa ,
Yoshihiro Ishitani ,
Song-Bek Che ,
Ke Xu ,
Xinqiang Wang ,
Masayoshi Yoshitani ,
Wataru Terashima  and
Naoki Hashimoto
Akihiko Yoshikawa
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Yoshihiro Ishitani
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Song-Bek Che
Affiliation:
Department of Electronics and Mechanical Engineering Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Ke Xu
Affiliation:
InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Xinqiang Wang
Affiliation:
Center for Frontier Electronics and Photonics InN-project as a CREST program of JST, Chiba University 1–33 Yayoi-cho, Inage-ku, Chiba 263–8522, Japan
Masayoshi Yoshitani
Affiliation:
Department of Electronics and Mechanical Engineering
Wataru Terashima
Affiliation:
Department of Electronics and Mechanical Engineering
Naoki Hashimoto
Affiliation:
Department of Electronics and Mechanical Engineering
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Abstract

Epitaxy of InN films with N-polarity and In-polarity was investigated by RF-MBE with several in-situ monitoring/controlling systems. It was found that the epitaxy temperature for N-polarity growth could be as high as 600 °C and this was about 100 deg higher than that for In-polarity case. This temperature difference in two polarities drastically affected not only the growth behaviors but also the properties of InN epilayers, i.e. N-polarity growth was preferable in both view-points. The step-flow-like surface morphology was achieved for the InN films grown with N-polarity at 580 °C. The FWHMs of X-ray rocking curves for InN (002) and (102) of 5–8 μm-thick InN films grown in N-polarity were about 200–350 and 650–950 arcsec, respectively. The highest Hall mobility was above 2000 cm2/V·s with a background carrier concentration of 1–2×1018 cm−3 at room temperature. For both polarity films, N-rich condition was necessary for the stable InN growth to obtain 5–8 μm-thick InN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E4.1
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A., and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).Google Scholar
2. Saito, Y., Teraguchi, N., Suzuki, A., Akraki, T., Nanishi, Y., Jpn. J. App. Phys. Part 2 40, L91 (2001).Google Scholar
3. Davydov, V. Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A. V., Ader-hold, J., Semchinova, O., and Graul, J., Phys. Status Solidi B 229, R1 (2002).Google Scholar
4. Xu, K., Terashima, W., Hata, T., Hashimoto, N., Ishitani, Y., Yoshikawa, A., phys. stat. sol. (c) 0, No. 1, 377 (2002).Google Scholar
5. Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W. III, Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., and Nanishi, Y., Appl. Phys. Lett. 80, 3967 (2002).Google Scholar
6. Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., and Kurimoto, E., Appl. Phys. Lett. 81, 1246 (2002).Google Scholar
7. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Koley, G., and Eastman, L. F., Appl. Phys. Lett. 79, 1489 (2001).Google Scholar
8. Higashiwaki, M., and Matsui, T., Jpn. J. App. Phys. Part 2 41, L540 (2002).Google Scholar
9. Saito, Y., Yamaguchi, T., Kanazawa, T., Kano, K., Araki, T. and Nanishi, Y., Teraguchi, T., and Suzuki, A., J. Cryst. Growth, 237–239, 1017 (2002).Google Scholar
10. Xu, K. and Yoshikawa, A., Appl. Phys. Lett., 83, 251 (2003).Google Scholar
11. Xu, K., Terashima, W., Hata, T., Hashimoto, N., Yoshitani, M., Cao, B., Ishitani, Y., and Yoshikawa, A., phys. stat. sol. (c) 0, 2814 (2003).Google Scholar
12. Xu, K., Hashimoto, N., Cao, B., Hata, T., Terashima, W., Yoshitani, M., Ishitani, Y., and Yoshikawa, A., phys. stat. sol. (c) 0, 2790 (2003).Google Scholar
13. Ishitani, Y., Xu, K., Terashima, W., Hashimoto, N., Yoshitani, M., Hata, T., and Yoshikawa, A., phys. stat. sol(c), 0, 2838, (2003).Google Scholar
14. Feenstra, R. M., Northrup, J. E., and Neugebauer, J., MRS Internet J. Nitride Semicond. Res. 7, 3 (2002), and the related REFERENCES cited in this paper.Google Scholar
15. Lim, D. H., Xu, K., Arima, S., Yoshikawa, A. and Takahashi, K., J. Appl. Phys. 91, 6461 (2002)Google Scholar
16. Feenstra, R. M., Chen, Huajie, Ramachandran, V., Lee, C. D., Smith, A. R., Northrup, J. E., Zywietz, T., Neugebauer, J., and Greve, D. W., Surf. Sci. Review and Letters 7, 601 (2000).Google Scholar
17. Heying, B., Smorchkova, I., Poblenz, C., Elsass, C., Fini, P., Den Baars, S., Mishra, U., and Speck, J. S., Appl. Phys. Lett. 77, 2885 (2000)Google Scholar
18. Xu, K., Yano, N., Jia, A.W., Yoshikawa, A., Takahashi, K., J. Crystal Growth, 998, 237 (2002).Google Scholar
19. Yoshikawa, Akihiko and Xu, Ke, Thin Solid Films, 412, 38 (2002) and the REFERENCES therein.Google Scholar
20. Yoshikawa, Akihiko, Xu, Ke, Taniyasu, Yoshitaka, and Takahashi, Kiyoshi, phys. status solidi (a), 190, 33 (2002).Google Scholar
21. Yoshikawa, A. and Xu, K., Opt. Mater. 23, 7 (2003).Google Scholar
22. Taniyasu, Y. and Yoshikawa, A., J. Elect. Mater. 30, 1402 (2001)Google Scholar
23. Ishitani, Y., Xu, K., Terashima, W., Masuyama, H., Yoshitani, M., Hashimoto, N., Che, S.B., and Yoshikawa, A., Proc. of the 2003 MRS-Fall Meeting, 798, 207 (2004).Google Scholar