Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
TU, C.W.
LIANG, B.W.
and
DONNELLY, V.M.
1991.
Frontiers of Materials Research: Electronic and Optical Materials.
p.
511.
Kuech, Thomas F.
and
Jensen, Klavs F.
1991.
Thin Film Processes.
p.
369.
Kikkawa, T.
Ohori, T.
Tanaka, H.
Kasai, K.
and
Komeno, J.
1991.
Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine.
Journal of Crystal Growth,
Vol. 115,
Issue. 1-4,
p.
448.
JENSEN, KLAVS F.
and
KERN, WERNER
1991.
Thin Film Processes.
p.
283.
Jensen, Klavs F.
Fotiadis, Dimitrios I.
and
Mountziaris, Triantafillos J.
1991.
Detailed models of the MOVPE process.
Journal of Crystal Growth,
Vol. 107,
Issue. 1-4,
p.
1.
Coltrin, Michael E.
Kee, Robert J.
and
Rupley, Fran M.
1991.
Surface chemkin: A general formalism and software for analyzing heterogeneous chemical kinetics at a gas‐surface interface.
International Journal of Chemical Kinetics,
Vol. 23,
Issue. 12,
p.
1111.
Black, Linda R.
Clark, Ivan O.
Fox, Bradley A.
and
Jesser, William A.
1991.
MOCVD of GaAs in a horizontal reactor: modeling and growth.
Journal of Crystal Growth,
Vol. 109,
Issue. 1-4,
p.
241.
Kikkawa, T.
Tanaka, H.
and
Komeno, J.
1992.
Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE.
Journal of Electronic Materials,
Vol. 21,
Issue. 3,
p.
305.
Vlachos, D. G.
1997.
Multiscale integration hybrid algorithms for homogeneous–heterogeneous reactors.
AIChE Journal,
Vol. 43,
Issue. 11,
p.
3031.
Theodoropoulos, C.
Moffat, H. K.
and
Mountziaris, T. J.
1997.
Robust Reaction-Transport Models of Movpe Reactors.
MRS Proceedings,
Vol. 490,
Issue. ,
Coltrin, Michael E.
Willan, Christine C.
Bartram, Michael E.
Han, Jung
Missert, Nancy
Crawford, Mary H.
and
Baca, Albert G.
1998.
Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth.
MRS Proceedings,
Vol. 537,
Issue. ,
Coltrin, Michael E.
Willan, Christine C.
Bartram, Michael E.
Han, Jung
Missert, Nancy
Crawford, Mary H.
and
Baca, Albert G.
1999.
Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 4,
Issue. S1,
p.
588.
Karpov, S.Yu.
2003.
Advances in the modeling of MOVPE processes.
Journal of Crystal Growth,
Vol. 248,
Issue. ,
p.
1.
Wu, J.‐S.
Hsiao, W.‐J.
Lian, Y.‐Y.
and
Tseng, K.‐C.
2003.
Assessment of conservative weighting scheme in simulating chemical vapour deposition with trace species.
International Journal for Numerical Methods in Fluids,
Vol. 43,
Issue. 1,
p.
93.
Zhang, Wei
Liu, Peichi
Jackson, Biyun
Sun, Tianshu
Huang, Shyh-Jer
Hsu, Hsiao-Chiu
Su, Yan-Kuin
Chang, Shoou-Jinn
Li, Lei
Li, Ding
Wang, Lei
Hu, XiaoDong
and
Xie, Y. H.
2013.
Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN.
Journal of Applied Physics,
Vol. 113,
Issue. 14,