Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:07:27.280Z Has data issue: false hasContentIssue false
  • English
  • Français

Materials for Mid-Infrared Semiconductor Lasers

Published online by Cambridge University Press:  10 February 2011

A. R. Kost
A. R. Kost*
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265, [email protected]
Get access

Abstract

A variety of semiconductor materials have been used to fabricate diode lasers for the midinfrared. Lasers using the lead salts (e.g. PbSnTe) have been commercially available for some time. Mid-infrared emitting III-V semiconductors (e.g. InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these materials offer higher powers. Of particular interest are the III-V semiconductor lasers based on type-II superlattices (e.g. InAs/GaInSb). Among the many unique properties attributed to type-Il superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption - all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Menna, R. J., Capewell, D. R., Martinelli, Ramon U., York, P. K., and Enstrom, R. E., Appl. Phys. Lett. 59, 2127 (1991).Google Scholar
2. Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Baucom, K. C., and Howard, A. J., Appl. Phys. Lett. 64, 812 (1994).Google Scholar
3. Baranov, A. N., Imenkov, A. N., Sherstnev, V. V., and Yakovlev, Yu. P., Appl. Phys. Lett. 64, 2480 (1994).Google Scholar
4. Le, H. Q., Turner, G. W., Eglash, S. J., Choi, H. K., Coppeta, D. A., Appl. Phys. Lett. 64, 152 (1994).Google Scholar
5. Yong-Hang Zhang, Richard Miles, H., and David Chow, H., IEEE J. Of Selected Topics in Quantum Electron. 1, 749 (1995).Google Scholar
6. Choi, H. K. and Turner, G. W., Appl. Phys. Lett. 67, 332 (1995).Google Scholar
7. Chow, D. H., Miles, R. H., Hasenberg, T. C., Kost, A. R., Zhang, Y.-H., Dunlap, H. L., and West, L., Appl. Phys. Lett. 67, 3700 (1995).Google Scholar
8. Grein, C. H., Young, P. M., and Ehrenreich, H., J. Appl. Phys. 76, 1940 (1994).Google Scholar
9. Flatté, M. E., Grein, C. H., Ehrenreich, H., Miles, R. H., Cruz, H., J. Appl. Phys. 78, 4552 (1995).Google Scholar
10. Shi, Z., Tacke, M., Lambrecht, A., and Böttner, H., Appl. Phys. Lett. 66, 2537 (1995).Google Scholar
11. Zandian, M., Arias, J. M., Zucca, R., Gil, R. V., and Shin, S. H., Appl. Phys. Lett. 59, 1022 (1991).Google Scholar
12. Turner, G. W., Manfra, M. J., Choi, H. K., and Connors, M. K., J. of Crystal Growth, 175/176, 825 (1997).Google Scholar
13. Wu, D., Kaas, E., Diaz, J., Lane, B., Rybaltowski, A., Yi, H. J., and Razeghi, M., IEEE Photon. Tech. Lett. 9, 175 (1997).Google Scholar
14. Kost, A. R., West, L., Miles, R. H., Hasenberg, T. C., in In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, Proc. SPIE 3001, 321 (1997).Google Scholar
15. Hasenberg, T. C., Miles, R. H., Kost, A. R., and West, L., IEEE J. Quantum Electron. QE–33, 1403 (1997).Google Scholar
16. Zhang, Y. H., Le, H. Q., Chow, D. H., and Miles, R. H., in Proc. of the 7th Intl. Conference on Narrow Gap Semiconductors, (IOP, Brystol, 1995) pp. 36–40.Google Scholar
17. Faist, Jérome, Capasso, Federico, Sitori, Carlo, Sivco, Deborah L., Baillargeon, James N., Hutchinson, Albert L., Chu, Sung-Nee G., and Cho, Albert Y., Appl. Phys. Lett. 70, 2670 (1997).Google Scholar
18. Slivken, S., Jelen, C., Rybaltowski, A., Diaz, L., and Razeghi, M., Appl. Phys. Lett. 71, 2593 (1997).Google Scholar
19. Felix, C. L., Bewley, W. W., Vurgaftman, I., Meyer, J. R., Zhang, D., Lin, C.-H., Yang, R. Q., and Pei, S. S., IEEE Photon. Technol. Lett. 9, 1433 (1997).Google Scholar