Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T01:55:36.432Z Has data issue: false hasContentIssue false

Materials For Laser-Plasma X-Ray Source Targets Applicable To Lithography

Published online by Cambridge University Press:  15 February 2011

M. Chaker
Affiliation:
INRS-Énergie et Matériaux, 1650 Montée Ste-Julie, Varennes, Québec, Canada, J3X 1S2
J.F. Pelletier
Affiliation:
INRS-Énergie et Matériaux, 1650 Montée Ste-Julie, Varennes, Québec, Canada, J3X 1S2
J.C. Kieffer
Affiliation:
INRS-Énergie et Matériaux, 1650 Montée Ste-Julie, Varennes, Québec, Canada, J3X 1S2
Get access

Abstract

In recent years, several X-ray lithography experiments involving laser plasma sources have been reported. The high X-ray conversion efficiency (η – 10%) in the keV range observed in various laboratories, using high laser intensities (I > 5 × 1012 W cm−2), has already made these sources an attractive alternative to the electron storage rings for X-ray lithography in proximity printing (XRL). In addition, X-rayproduction in the region around 130 Å has also been investigated at intensities of about 1011 W cm−2 for applications to X-ray Projection Lithography (XRPL). Conversion efficiency up to 1% into a 3 Å bandwidth has been demonstrated. In principle, a large variety of X-ray spectra can be obtained from a laser plasma source depending on the laser-target parameters. However, high conversion efficiencies, in a given spectral range, can only be achieved under specific plasma conditions (target atomic number, plasma temperature, plasma volume and spatio-temporal expansion...). This leads to some restrictions in possible target materials and irradiation conditions (laser wavelength, laser intensity, pulse duration). In this paper, we will discuss this physical aspect basing our analysis on both the theoretical and experimental studies of the X-ray spectra in different X-ray energy ranges and for various target atomic numbers. In addition, we will examine issues related to the laser plasma X-ray source design for both XRL and XRPL applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Warlaumont, J., J. Vac. Sci. Technol. B 7, 1634 (1989)Google Scholar
[2] Zwicker, G., Windbracke, W., Bernst, H., Friedrich, D., Zuber, H.Z., Krullmann, E., Pelka, M., Lange, C., Hemicker, P. and Standt-Fischbach, , J. Vac. Sci. Technol. B 7, 1642 (1989)CrossRefGoogle Scholar
[3] Yoshikawa, A., Horiuchi, T., Deguchi, K., Miyahe, M., Yamamoto, E., Sakakibara, Y. and Kitayama, T., Microelectron. Eng. 11, 233 (1990)Google Scholar
[4] Chen, G., Wallace, J., Nachman, R., Wells, G., Bodoh, D., Anderson, P., Reilly, M. and Cerrina, F., J. Vac. Sci. Technol. B 10, 3229 (1992)Google Scholar
[5] Chen, Y., Haghiri-Gosnet, A.M., Decanini, D., Ravet, M.F., Rousseaux, F. and Launois, H., J. Vac. Sci. Technol. B 10, 3243 (1992)Google Scholar
[6] Glibert, K.M., Anthes, J.P., Gusinow, M.A., Palmer, M.A., Whitlock, R.R. and Nagel, D.J., J. Appl. Phys. 51, 1449 (1980)Google Scholar
[7] Nagel, D.J., Proc. SPfE 448, 17 (1984)Google Scholar
[8] Alaterre, P., Pépin, H., Fabbro, R. and Faral, B., Phys. Rev. A 34, 4184 (1986)Google Scholar
[9] Mochizuki, T., Yabe, T., Okada, K., Hamada, M., Ikeda, N., Kiyokawa, S. and Yamanaka, C., Phys. Rev. A 33, 525 (1986)Google Scholar
[10] Vinogradov, A.V. and Shlyaptsev, V.N., Sov. J. Quantum Electron. 17, 1 (1987)Google Scholar
[11] Kodama, R., Mochizuki, R., Tanaka, K.A. and Yamanaka, C., Appl. Phys. Lett. 50, 720 (1987)Google Scholar
[12] Popil, R., Gupta, P.D., Fedosejevs, R. and Offenberger, A.A.., Phys. Rev. A 35, 3874 (1987)Google Scholar
[13] Chaker, M., Pépin, H., Bareau, V., Fontaine, B. La, Toubhans, I., Fabbro, R. and Faral, B., J. Appl. Phys. 63, 892 (1988)Google Scholar
[14] Davis, G.M., Gower, M.C., O'Neill, F. and Turcu, I.C.E., Appl. Phys. Lett. 53, 1583 (1988)Google Scholar
[15] Chaker, M., Pépin, H., Bareau, V., Fontaine, B. La, Toubhans, I., Fabbro, R. and Currie, J.F., Proc. SPIE 831, 237 (1988)Google Scholar
[16] Eidmann, B.K. and Schwanda, W., Laser Part. Beams 9, 551 (1991)Google Scholar
[17] Morsell, A.L., Powers, M. and Shields, H., Appl. Phys. Lett. 60, 425 (1992)CrossRefGoogle Scholar
[18] Broughton, J.N. and Fedosejevs, R., Appl. Phys. Lett. 60, 1818 (1992)CrossRefGoogle Scholar
[19] Nagel, D.J., Peckerar, M.C., Whitlock, R.R., Greig, J.R. and Pechacek, R.E., Electron. Lett. 14, 781 (1978)CrossRefGoogle Scholar
[20] Yaakobi, B., Kim, H., Soures, J.M., Deckman, H. W. and Dunsmuir, J., Appl. Phys. Lett. 43, 686 (1983)CrossRefGoogle Scholar
[21] Pépin, H., Alaterre, P., Chaker, M., Fabbro, R., Faral, B., Toubhans, I., Nagel, D.J. and Peckerar, M.C., J. Vac. Sci. Technol. B 5, 27 (1987)Google Scholar
[22] Peters, D.W., Drumheller, J.P., Frankel, R.D., Kaplan, A.S., Preston, S.M., and Tomes, D.N., Proc. SPIE 923, 28 (1988)Google Scholar
[23] Kühne, M. and Petzold, H.C., Appl. Opt. 27, 3926 (1988)Google Scholar
[24] Chaker, M., Boily, S., Fontaine, B. La, Kieffer, J.C., Pépin, H., Toubhans, I. and Fabbro, R., Microelectron. Eng. 10, 91 (1990)Google Scholar
[25] Frackoviak, J., Celler, G.K., Freeman, R.R., Jurgensen, C.W., Kola, R.R., Novembre, A. E., Tai, W.W., Thompson, L.F., Trimble, L.E. and Tomes, D.N., J. Vac. Sci. Technol. B 9, 3198 (1991)Google Scholar
[26] Chaker, M., Fontaine, B. La, Côté, C.Y., Kieffer, J.C., Pépin, H., Talon, M.H., Enright, G.D. and Villeneuve, D., J. Vac. Sci. Technol. B 10, 3239 (1992)Google Scholar
[27] Celler, G.K., Biddick, C., Frackoviak, J., Jurgensen, C.W., Kola, R.R., Novembre, A.E., Trimble, L.E. and Tennant, D.M., J. Vac. Sci. Technol. B 10, 3186 (1992)Google Scholar
[28] Ceglio, N.M., and Hawryluk, A.M., Proc. OSA 12, 5 (1991)Google Scholar
[29] Kauffman, R.L. and Phillion, D.W., Proc. OSA 12, 68 (1991)Google Scholar
[30] Cerjan, C. and Rosen, M.D., Proc. OSA 12, 72 (1991)Google Scholar
[31] Rockett, P.D., Hunter, J.A., Kensek, R., Proc. OSA 12, 76 (1991)Google Scholar
[32] Kubiak, G.D., Tichenor, D.A., Malinowski, M.E., Stulen, R.H., Haney, S.J., Berger, K.W., Brown, L.A., Bjorkholm, J.E., Freeman, R.R., Mansfield, W.M., Tennant, D.M., Woods, O.R. II, Bokor, J., Jewell, T.E., White, D.L., Windt, D.L. and Waskiewicz, W.K., J. Vac. Sci. Technol. B 9, 3184 (1991)Google Scholar
[33] Silfvast, W.T., Richardson, M.C., Bender, H., Hanzo, A., Yanovsky, V., Jin, F. and Thorpe, J., J. Vac. Sci. Technol. B 10, 3126 (1992)CrossRefGoogle Scholar
[34] Saltzmann, D. and Krumbein, A., J. Appl. Phys. 49, 3229 (1978).Google Scholar
[35] Duston, D., Clark, R.W., Davis, J. and Apruzese, J.P., Phys. Rev. A 27, 1441 (1983).Google Scholar
[36] Mead, W.C., Campbell, E.M., Estabrook, K.G., Turner, R.E., Kruer, W.L., Lee, P.H., Pruet, B., Rupert, V.C., Tursell, K.G., Stradling, G.L., Ze, F., Max, C.E., Rosen, M.D. and Lasinski, B., Phys. Fluids 26, 2316 (1983).Google Scholar
[37] Mochizuki, T., Yabe, T., Okada, K., Hamada, M., Ikada, N., Kiyokawa, S. and Yamanaka, C., Phys. Rev. 33A, 525 (1986).Google Scholar
[38] More, R.M., Lawrence Livermore National Laboratory Report No. UCRL-84991 (1981) (unpublished).Google Scholar
[39] McMaster, W.H. et al., Lawrence Livermore National Laboratory Report No. UCRL- 50179-SECZ-R1 (1969) (unpublished).Google Scholar
[40] Day, R.H., Lee, P., Saloman, E.B. and Nagel, D.J., J. Appl. Phys. 52, 6965 (1981).Google Scholar
[41] Chaker, M., Bareau, V., Kieffer, J.C., Pépin, H. and Johnston, T.W., Rev. Sci. Instrum. 60, 3386 (1989).Google Scholar
[42] Gordon, H., Hobby, M.G. and Peacock, N.J., J. Phys. B. 13, 1985 (1980).Google Scholar
[43] Chaker, M., Boily, S., Lafontaine, H., Mercier, P.P., Currie, J.F., Kieffer, J.C. and Pépin, H., Microelectron. Eng. 11, 313 (1990).Google Scholar
[44] Boily, S., Chaker, M., Pépin, H., Kerdja, T., Voyer, J., Jean, A., Kieffer, J.C., Leung, P., Cerrina, F. and Wells, G., J. Vac. Sci. Technol. B 9, 3254 (1991)Google Scholar
[45] Dupendant, H., Gavigan, J.P., Givord, D., Lienard, A., Rebouillard, J.P. and Souche, Y., Appl. Surf. Sci., 43, 369 (1985)Google Scholar