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Materials Characterization and Device Performance of a CMR-Ferroelectric Heterostructure

Published online by Cambridge University Press:  17 March 2011

S. R. Surthi ,
S. Kotru  and
R. K. Pandey
S. R. Surthi
Affiliation:
Department of Electrical and Computer Engineering The University of Alabama, Tuscaloosa, AL 35487-0286, U.S.A.
S. Kotru
Affiliation:
Department of Electrical and Computer Engineering The University of Alabama, Tuscaloosa, AL 35487-0286, U.S.A.
R. K. Pandey
Affiliation:
Department of Electrical and Computer Engineering The University of Alabama, Tuscaloosa, AL 35487-0286, U.S.A.
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Abstract

Abstract:The films of colossal magnetoresistive La0.67Ca0.33MnO3 (LCMO) and ferroelectric SbSI were grown by pulsed laser deposition method for fabricating their heterostructures. By varying the processing conditions during film growth and controlling subsequently the annealing conditions, the resistivity transport properties of the LCMO films could be greatly modified. Preliminary tests on the ferroelectric field effect transistor (FeFET) based on LCMO-SbSI heterostructure showed that the device behaves like a nonvolatile memory element. The FeFET showed a maximum channel modulation of ∼10% at room temperature, and the switching voltage was less than 2 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R10.2
Copyright
Copyright © Materials Research Society 2002

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