No CrossRef data available.
Article contents
Materials and Structures for Advanced III-HBTs
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper reviews the present status of heterojunction bipolar transistor (HBT) technology based on GaAlAs/GaAs and InP/InGaAs materials, and discusses a variety of approaches for device improvement. Among the possibilities presented are novel structures to reduce base-collector capacitance, and novel materials to increase breakdown voltage and reduce base-emitter turn-on voltage.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1993