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Material Properties of GaN in the Context of Electron Devices

Published online by Cambridge University Press:  10 February 2011

H. Morkoç ,
R. Cingolani ,
W. Lambrecht ,
B. Gil ,
H.-X Jiang ,
J. Lin ,
D. Pavlidis  and
K. Shenai
H. Morkoç
Affiliation:
Virginia Commonwealth University, P.O. Box 843072, Richmond, USA, 23284-3072
R. Cingolani
Affiliation:
Virginia Commonwealth University, P.O. Box 843072, Richmond, USA, 23284-3072
W. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
B. Gil
Affiliation:
Montpellier University II, 34095 Montpellier CEDEX 5 France
H.-X Jiang
Affiliation:
Kansas State University, Manhattan, Kansas 66506-2601
J. Lin
Affiliation:
Kansas State University, Manhattan, Kansas 66506-2601
D. Pavlidis
Affiliation:
University of Michigan, Ann Arbor, MI 48109-2122
K. Shenai
Affiliation:
University of Illinois, Chicago, IL 60607-7053
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Abstract

Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G1.2
Copyright
Copyright © Materials Research Society 1999

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