Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T01:40:22.007Z Has data issue: false hasContentIssue false
  • English
  • Français

Material Properties of GaN in the Context of Electron Devices

Published online by Cambridge University Press:  10 February 2011

H. Morkoç ,
R. Cingolani ,
W. Lambrecht ,
B. Gil ,
H.-X Jiang ,
J. Lin ,
D. Pavlidis  and
K. Shenai
H. Morkoç
Affiliation:
Virginia Commonwealth University, P.O. Box 843072, Richmond, USA, 23284-3072
R. Cingolani
Affiliation:
Virginia Commonwealth University, P.O. Box 843072, Richmond, USA, 23284-3072
W. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
B. Gil
Affiliation:
Montpellier University II, 34095 Montpellier CEDEX 5 France
H.-X Jiang
Affiliation:
Kansas State University, Manhattan, Kansas 66506-2601
J. Lin
Affiliation:
Kansas State University, Manhattan, Kansas 66506-2601
D. Pavlidis
Affiliation:
University of Michigan, Ann Arbor, MI 48109-2122
K. Shenai
Affiliation:
University of Illinois, Chicago, IL 60607-7053
Get access

Abstract

Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G1.2
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Strite, S.T. and Morkoç, H., J. Vac. Sci. and Tech. B10, pp. 1237–1266 (1992).Google Scholar
2 Morkoç, H., Strite, S., Gao, G. B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. Rev. 76, pp. 1363–1398 (1994).Google Scholar
3 Mohammad, S. N. and Morkoç, H., Progress and Prospects of Group III-V Nitride Semiconductors, Progress in Quantum Electronics, Vol. 20, No. 5/6, pp. 361–525, (1996).Google Scholar
4 Group III Nitride Semiconductor Compounds, Edited by Gil, B., Clarendon Press, Oxford (1998), ISBN 0-19-850159-5.Google Scholar
5 Morkoç, H., Wide Bandgap Nitride Devices, Springer, in press.Google Scholar
6 Nakamura, S. and Fosol, G., The Blue Laser, Springer Verlag, 1997.Google Scholar
7 Razeghi, M. and Rogalski, A., J. Appl. Phy. 79, 7433 (1996).Google Scholar
8 Xu, G. Y., Salvador, A., Kim, W., Fan, Z., Lu, C., Tang, H., Morkoç, H., Smith, G., Estes, M., Goldenberg, B., Yang, W., and Krishnankutty, S., Appl. Phys. Letts. 71, pp. 2154–2156 (1997).Google Scholar
9 Morkoç, H., ìWurtzite GaN-Based Heterostructures by Molecular Beam Epitaxy, IEEE J. Selected topics in Quantum Electronics, Eds. Miles, Richard and Akasaki, I., Vol. 4, Number 3, pp. 537–549 (1998).Google Scholar
10 Morkoç, H., ìBeyond SiC III-V Nitride Based Heterostructures and Devices, in SiC Materials and Devices, Ed. Park, Y. S., Vol. 52, pp. 307–394, Academic Press (1998).Google Scholar
11 Sheppard, S. T. et al. presented at Device Research Conference, June 1998, Charlottesville, VA. Other GaN MODFETs references include: Wu, Y.-F., IEEE Electron Device Letters 19, pp 50–53 (1998); A.T. Ping et al., IEEE Electron Device Letters 19, pp 54-56 (1998).Google Scholar
12 Takeuchi, T., Wetzel, C., Yamaguchi, S., Sakai, H., Amano, H., Akasaki, I., Kaneko, Y., Nakagawa, S., Yamaoka, Y., and Yamada, N., Appl. Phys. Lett. 73, 1691 (1998)Google Scholar
13 Im, J.S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B57, R9435 (1998)Google Scholar
14 Kim, H. S., Lin, J. Y., Jiang, H. X., Chow, W.W., Botchkarev, A. E., and Morkoç, H., Appl. Phys. Letts. In press.Google Scholar
15 Leroux, M., Grandjean, N., Massies, J., Gil, B., Lefebvre, P., and Bigenwald, P., Phys. Rev. B. in press;Google Scholar
16 Cingolani, Roberto, Botchkarev, A., Tang, H., Morkoç, Hadis, Colil, Giuliano and Lomascolo, Mauro, Carlo, A. Di, and Lugli, P., Appl. Phys. Letts,.submitted.Google Scholar
17 Bykhovski, A., Gelmont, B., and Shur, M., Appl. Phys. Lett. 63, 2243, (1993).Google Scholar
18 Yu, E.T., Sullivan, G.J., Asbeck, P.M., Wang, C.D., Qiao, D., and Lau, S.S., Appl. Phys. Lett. 71, 2794 (1997)Google Scholar
19 Asbeck, P.M., Yu, E.T., Lau, S.S., Sullivan, G.J., Hove, J. Van and Redwing, J., Elec. Lett. 33(14), 1230 (1997).Google Scholar
20 Shenai, K., Scott, R. S., and Baliga, B. J., IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1811–1823, Sept. 1989.Google Scholar
21 King-Smith, R.D. and Vanderbilt, D., Phys. Rev. B 47, 1651 (1990).Google Scholar
22 Resta, R., Rev. Mod. Phys. 66, 899 (1994).Google Scholar
23 Bernardini, F. and Fiorentini, V., Phys. Rev. B. 57, No 16, pp. 1-4, 15 April (1998)Google Scholar
24 Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997)Google Scholar
25 Kim, K., Lambrecht, W. R. L., and Segall, B. Phys. Rev. B 56, 7018 (1997)Google Scholar
26 Hellman, E.S., in MRS Internet J. Nitride Semiconductor Research 3, 11.Google Scholar
27 Bykhovski, A.D., Kaminski, V. V., Shur, M. S., Chen, Q. C., and Khan, M. A., Appl. Phys. Lett., 69, 3254, (1996)Google Scholar
28 Asbeck, P.M., Yu, E.T., Lau, S.S., Sullivan, G.J., Hove, J. Van and Redwing, J., Electronics Lett. 33(14), 1230 (1997).Google Scholar
29 Yu, E.T., Sullivan, G.J., Asbeck, P.M., Wang, C.D., Qiao, D. and Lau, S.S., Appl. Phys. Lett. 71, 2794 (1997).Google Scholar
30 Martin, G. A., Strite, S., Botchkarev, A., Agarwal, A., Rockett, A., Morko, H., Lambrecht, W. R. L. and Segall, B., Appl. Phys. Lett. 65, 610 (1994).Google Scholar
31 Martin, G. A., PhD. Thesis, ÒSemiconductor electronic band alignment at heterojunctions of wurtzite AIN, GaN and InNÓ, Department of Physics, University of Illinois, 1996.Google Scholar
32 Martin, G. A., Botchkarev, A., Agarwal, A., Rockett, A., Morko, H., Appl. Phys. Lett. Vol. 68, 2541, (1996).Google Scholar
33 Gil, B., Lefebvre, P., Allègre, J., Mathieu, H., Grandjean, N., Leroux, M., Massies, J., Bigenwald, P., and Christol, P., Phys. Rev. B. in press.Google Scholar
34 Takeuchi, T., Wetzel, C., Yamaguchi, S., Sakai, H., Amano, H., Akasaki, I., Kaneko, Y., Nakagawa, S., Yamaoka, Y., and Yamada, N., Appl.Phys. Lett. 73, 1691 (1998)Google Scholar
35 Bastard, G., in ÓWave Mechanics Applied to Semiconductor HeterostructuresÓ, Edition de Physique, Paris, France, 1987 Google Scholar
36 Singh, J., in “Semiconductor OptoelectronicsÓ (1995)Google Scholar
37 Sala, F. Della, DiCarlo, A., Lugli, P., Bernardini, F., Fiorentini, V., Scholz, R., and Jancu, J.M., Appl. Phys. Lett., in press (1998)Google Scholar
38 Jancu, J.M., Scholz, R., Beltram, F., and Bassani, F., Phys. Rev. B57, 6493 (1995).Google Scholar