Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:29:43.348Z Has data issue: false hasContentIssue false
  • English
  • Français

Material Properties and Process Compatibility of Spin-on Nano-foamed Polybenzoxazole for Copper Damascene Process

Published online by Cambridge University Press:  11 February 2011

Takashi Enoki ,
Kenzo Maejima ,
Hidenori Saito  and
Akifumi Katsumura
Takashi Enoki
Affiliation:
Fundamental Research Laboratory, Research Department, Sumitomo Bakelite Co., Ltd., 495, Akiba-cho, Totsuka-ku, Yokohama, 245–0052, Japan
Kenzo Maejima
Affiliation:
Fundamental Research Laboratory, Research Department, Sumitomo Bakelite Co., Ltd., 495, Akiba-cho, Totsuka-ku, Yokohama, 245–0052, Japan
Hidenori Saito
Affiliation:
Fundamental Research Laboratory, Research Department, Sumitomo Bakelite Co., Ltd., 495, Akiba-cho, Totsuka-ku, Yokohama, 245–0052, Japan
Akifumi Katsumura
Affiliation:
Fundamental Research Laboratory, Research Department, Sumitomo Bakelite Co., Ltd., 495, Akiba-cho, Totsuka-ku, Yokohama, 245–0052, Japan
Get access

Abstract

We have developed nano-foamed OxD which has good properties such as dielectric constant=2.2, homogeneous distributed nano pores, smooth surface based on polybenzoxazole chemistry and nano-foaming technology. The nano-foamed OxD also has excellent thermal stability, chemical stability and etching property. The developed nano-foamed OxD is one of good candidates for copper damascene structure to achieve shrinking dimensions of future semi-conductor devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 740: Symposium I – Nanomaterials for Structural Applications , 2002 , I12.9
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2001.Google Scholar
2. Lowack, K., Schmid, G, Maltenberger, A., Sezi, R., and Radlik, W. in Issues for CMOS Process Integration of OxD, the Innovative Low k Inter layer Dielectric, edited by Sachdev, H. S., Khojasteh, M. M., McHerron, D., (Proceedings of the seventh International conference on Polymers in Electronic Packaging, MeAfee, NJ, USA, October 18–20, 2000)pp. 113–119.Google Scholar
3. Xu, Yuhuan, et. al, Applied Physics Letter, 75, 853–855 (1999).Google Scholar
4. Carter, K. R., et. al., Mat. Res. Soc. Symp. Proc, Vol. 431, 487–495 (1996).Google Scholar
5. Tada, M., Kawahara, J., and Hayashi, Y., Conference Proceedings ULSI XVI (2001), Materials Research Society, pp. 579–585.Google Scholar
6. Lin, E. K., Wu, W., Jin, C., and Wetzel, J. T., Mat. Res. Soc. Symp. Proc, 612 (2000) D4.1.1–D4.1.8.Google Scholar
7. Maejima, K., Katsumura, A., Shin, J. C., Kurino, H., and Koyanagi, M., (the 63rd Autumn Meeting, 2002, the Japan Society of Applied Physics), p766.Google Scholar
8. Aoi, N. et al., Symposium on VLSI Technology Digest of Technical Papers, pp. 41–42, 1999.Google Scholar