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Material parameter basis for major and minor trends in nonproportionality of scintillators

Published online by Cambridge University Press:  12 October 2011

Qi Li ,
Joel Q. Grim ,
R. T. Williams ,
G. A. Bizarri  and
W. W. Moses
Qi Li
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, NC 27109
Joel Q. Grim
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, NC 27109
R. T. Williams
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, NC 27109
G. A. Bizarri
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
W. W. Moses
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

We have previously described a numerical model for carrier diffusion and nonlinear quenching in the track of an electron in a scintillator. Significant inequality of electron and hole mobilities predicts a characteristic “hump” in the light yield vs gamma energy, whereas low mobility of either or both carriers accentuates the universal roll-off due to nonlinear quenching at low gamma energy (high dE/dx). The material parameter basis of the two major trends in nonproportionality of scintillators can be related to the effective diffusion coefficient of excitations and the difference of electron and hole mobilities, respectively. Activator concentration, type of activator, and effect of transport anisotropy are associated with minor trends. The predicted trends are qualitatively consistent with empirical measures of nonproportionality including electron yield curves.

Keywords

transportationsimulationelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u04-05
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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