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Material Basis of Highly Stable a-Si:H Solar Cells

Published online by Cambridge University Press:  10 February 2011

B. Rech ,
S. Wieder ,
F. Siebke ,
C. Beneking  and
H. Wagner
B. Rech
Affiliation:
Forschungszentrum Jülich, Institut für Schicht- und lonentechnik, D-52425 Jftilich, Germany
S. Wieder
Affiliation:
Forschungszentrum Jülich, Institut für Schicht- und lonentechnik, D-52425 Jftilich, Germany
F. Siebke
Affiliation:
Forschungszentrum Jülich, Institut für Schicht- und lonentechnik, D-52425 Jftilich, Germany
C. Beneking
Affiliation:
Forschungszentrum Jülich, Institut für Schicht- und lonentechnik, D-52425 Jftilich, Germany
H. Wagner
Affiliation:
Forschungszentrum Jülich, Institut für Schicht- und lonentechnik, D-52425 Jftilich, Germany
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Abstract

We achieved a stabilized efficiency of 9.2 % after only 8 % relative degradation for an a-Si:H/a-Si:H stacked cell with the top-cell i-layer prepared at 140 °C using a high hydrogen dilution of the silane process gas. From a comprehensive characterization of p-i-n cells and the corresponding i-layer material prepared at 140 °C and 190 °C substrate temperature with different hydrogen dilutions, we conclude that the performance of these pin cells strongly correlates with the material properties of the corresponding i-layers. High fill factors after light soaking are reflected in a good microstructure, high photo-conductivity, and relatively low defect density. Whereas the initial Voc is limited by interface recombination, volume recombination dominates the forward-dark current after light soaking. The stabilized Voc as well as the short-circuit current densities correlate with the optical bandgap of the i-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 33
Copyright
Copyright © Materials Research Society 1996

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