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Maskless Patterning of Mo and Si by Focused Ion Beam Implantation

Published online by Cambridge University Press:  25 February 2011

Kenji Gamo ,
Katsuyuki Yonehara ,
Shohei Nagatomo  and
Susumu Namba
Kenji Gamo
Affiliation:
Faculty of Engineering Science Osaka University Toyonaka, Osaka 560, Japan
Katsuyuki Yonehara
Affiliation:
Faculty of Engineering Science Osaka University Toyonaka, Osaka 560, Japan
Shohei Nagatomo
Affiliation:
Faculty of Engineering Science Osaka University Toyonaka, Osaka 560, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science Osaka University Toyonaka, Osaka 560, Japan
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Abstract

Maskless patterning of Mo and Si was done by implanting 50 keV focused Ga+ ion beam and by plasma etching using CF4 gas. The implantation is done to modify the chemical properties of the sample surface. It was found that Mo films became etch-resistant for the plasma etching after implantation at a dose higher than 4×1015 /cm2. Si crystals showed a positive tone pattern due to a radiation enhanced etching at a dose lower than 5x1016/cm2. At higher doses, the etching rate decreased and above 8 x 1016/cm2, no etching was observed in the implanted region. Patterns with a thickness of a several hundred nanometers were formed by the present maskless patterning technique.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 79
Copyright
Copyright © Materials Research Society 1987

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References

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