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Maskless Patterning of Cr Films Using Focused Ion Beams

Published online by Cambridge University Press:  25 February 2011

K. Gamo ,
K. Moriizumi ,
T. Matsui  and
S. Namba
K. Gamo
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
K. Moriizumi
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
T. Matsui
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
S. Namba
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
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Abstract

Characteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated. Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CCl4 were measured. Sb profiles were also measured by Rutherford backscattering techniques. It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation. It was also found that a latent image of an Sb implanted pattern at a dose ≥3.8×1015/cm2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 531
Copyright
Copyright © Materials Research Society 1984

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References

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