Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-06T04:51:10.616Z Has data issue: false hasContentIssue false

Maskless Patterning and Structuring on Ultra-Hard Film Materials

Published online by Cambridge University Press:  10 February 2011

J.K. Park
Affiliation:
High Energy Laser Processing Laboratory, Dept. Materials Science & Mechanics Michigan State University, East Lansing, MI 48824
V.M. Ayres
Affiliation:
Micro and Nano Engineering Center, Dept. Electrical & Computer Engineering Michigan State University, East Lansing, MI 48824
J. Asmussen
Affiliation:
Micro and Nano Engineering Center, Dept. Electrical & Computer Engineering Michigan State University, East Lansing, MI 48824
K. Mukherjee
Affiliation:
High Energy Laser Processing Laboratory, Dept. Materials Science & Mechanics Michigan State University, East Lansing, MI 48824
Get access

Abstract

Ultra-hard film materials such as chemical vapor deposited (CVD) diamond are uniquely qualified for applications where superior tribological and electronic properties are required. Patterning of the film materials is essential to produce functional micro devices. Conventional lithography-based chemical etching is difficult or impossible on the ultra-hard diamond film materials, which have a high chemical resistance. Investigations on maskless patterning of the CVD diamond film are presented. Focused excimer laser pulses are used for dry etching on the film materials, and a micro computer numerical control (micro-CNC) stage is used for patterned translation of a target. The laser ablation of CVD diamond is observed to set up relationships among the processing parameters, such as the gas processing environments, the laser energy fluence and the number of laser pulses. The extent of the ablation-induced plasma is observed by time integrated image capturing. A cell-patterned structure, fabricated by the innovative maskless process, is presented for discussion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shikata, S., MRS Bulletin, 23, 61 (1998).10.1557/S0883769400029390Google Scholar
2. Tokarev, V.N., Wilson, J.I.B., Jubber, M.G., John, P., and Milne, D.K., Diamond and Related Materials, 4, 169 (1995).Google Scholar
3. Boudina, A., Fitzer, E., Wahl, G., and Esrom, H., Diamond and Related Materials, 2, 678 (1993).10.1016/0925-9635(93)90203-EGoogle Scholar
4. Pimenov, S.M., Smolin, A.A., Ralchenko, V.G., Konov, V.I., Likhanski, S.V., Veselovski, I.A., Sokolina, G.A., Bantsekov, S.V., and Spitsyn, B.V., Diamond and Related Materials, 2, 291 (1993).Google Scholar
5. Johnston, C., Chalker, P.R., Buckley-Golder, I.M., Marsden, P.J., and Williams, S.W., Diamond and Related Materials, 2, 829 (1993).Google Scholar
6. Srinivasan, R., Braren, B., Casey, K.G. and Yeh, M., Applied Physics Letters, 26, 2790 (1989).Google Scholar
7. Mukherjee, K., Kim, T.H., and Walter, W.T. in Lasers in Metallurgy, edited by Mukherjee, K. and Mazumder, J. (The Metallurgical Society of AIME, Chicago, IL, 1981) p. 137.Google Scholar