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Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si

Published online by Cambridge University Press:  15 February 2011

D. Danailov ,
D. Karpuzov ,
A. Almazouzi ,
P.De Almeida  and
M. Victoria
D. Danailov
Affiliation:
Institute of Electronics, Bulgarian Academy of Sciences, 72 blvd. Tzarigradsko Chaussee, BG-1784 Sofia, Bulgaria
D. Karpuzov
Affiliation:
Institute of Electronics, Bulgarian Academy of Sciences, 72 blvd. Tzarigradsko Chaussee, BG-1784 Sofia, Bulgaria
A. Almazouzi
Affiliation:
EPF Lausanne, Centre de Recherches en Physique des Plasmas, Association EURATOM, Technologie de la Fusion, CH-5232 Villigen PSI, Switzerland
P.De Almeida
Affiliation:
EPF Lausanne, Centre de Recherches en Physique des Plasmas, Association EURATOM, Technologie de la Fusion, CH-5232 Villigen PSI, Switzerland
M. Victoria
Affiliation:
EPF Lausanne, Centre de Recherches en Physique des Plasmas, Association EURATOM, Technologie de la Fusion, CH-5232 Villigen PSI, Switzerland
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Abstract

The 2D-dopant and defect distributions resulting from 80 keV ion implantation of As+ ions into Si through a high-edge mask are presented. The distributions are obtained by means of an efficient computer procedure using the results of Monte Carlo simulation. Two versions of the computer code TRIM are used. The 2D-target atom redistribution is obtained as a result of cascade collisions. The simulation reveals the effect of near-mask-edge target atom depletion. This effect is related to the recoil phenomena and can be explained on the basis of simple model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 119
Copyright
Copyright © Materials Research Society 1997

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