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Mapping Detector Response Over the Area of a CdZnTe-Multiple-Electrode Detector

Published online by Cambridge University Press:  10 February 2011

C. L. Lingren
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
B. Apotovsky
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
J. F. Butler
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
F. P. Doty
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
S. J. Friesenhahn
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
A. Oganesyan
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
B. Pi
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
S. Zhao
Affiliation:
Digirad Corporation, 7408 Trade Street, San Diego, CA 92121-2410
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Abstract

Semiconductor multiple-electrode detectors have been developed for the purpose of reducing effects of hole trapping in room-temperature radiation detectors.1,2 Some reported geometries maintain a nearly-uniform electric field inside the detector, but others generate an electric field that is very non-uniform and highly-concentrated at the anode. This paper reports the results of mapping such a detector (having a non-uniform electric field) with a finely collimated gamma-ray beam to determine the detector response as a function of position.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Luke, P.N., IEEE Trans. Nucl. Sci., vol.42, No. 4, pp. 207213, Aug. 1995.Google Scholar
2. Lingren, C.L., Apotovsky, B., Butler, J.F., Conwell, R.L., Doty, F.P., Friesenhahn, S.J., Oganesyan, A., Pi, B., Zhao, S., presented at the 1997 IEEE Nucl. Sci. Sym., Nov. 11, 1997, Albuquerue, NM (submitted for publication in conference proceedings).Google Scholar