Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-20T02:44:25.227Z Has data issue: false hasContentIssue false
  • English
  • Français

Manufacturing and Technology Requirements for Submicron Multilevel Metal

Published online by Cambridge University Press:  25 February 2011

T. E. Seidel
T. E. Seidel*
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Get access

Extract

Multilevel Metal (MLM) technology has been driven by the need for ever faster switching speed. In the simplest considerations, this need has been described by the RC time constant applied to the metal interconnect runner embedded in a dielectric medium:

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 3
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Saraswat, K. C. and Mohammadi, F., IEEE Trans, on Electron Devices, 29 (4), 645 (1982).CrossRefGoogle Scholar
2. Sinha, A. K., et al, IEEE Elec. Dev. Lett., 3 (4) (April 1982), p. 90.Google Scholar
3. Teal, V., et al, Thin Solid Films, 136, 21 (1986).CrossRefGoogle Scholar
4. Murarka, S. P., “Multilevel Metallization,” in Concise Encyclopedia of Semiconducting Materials and Related Technologies, eds Mahajan, S. and Kimmerling, L. C. (Pergamon Press, NY, 1992) p. 311.CrossRefGoogle Scholar
5. Bassous, E., Yu, H. N., and Maniscalco, V., J. Electrochem. Soc. 123, 1729 (1976).Google Scholar
6. Nulman, J., in Advanced Metallizations in Microelectronics, eds. Katz, A., Murarka, S. P. and Appelbaum, A. (Matl. Res. Soc. Proc, 52 Pittsburgh, PA, 1985), p. 123.Google Scholar
7. Maex, K., Hobbs, L. and Eichhammer, W., VLSI Sci, and Tech., edited by Andrews, J. M. and Celler, G. K., (ECS Pennington, NJ 1991), p. 254.Google Scholar
8. Murarka, S. P., IEEE Electron Devices, 34 (10) (October, 1987), p. 2108.CrossRefGoogle Scholar
9. Honeycut, J. W. and Rozgonyi, G. A., Appl. Phys. Lett. 58, 1302 (1991).Google Scholar
10. Scowalter, L. J., Growth and Characterization of Epitaxial Cobalt Disilicide on Silicon, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar
11. Hong, F., Solid State Interaction and Ultra-Thin Suicide Formation in Co/Ti/Si Multilayer System, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar
12. Fraser, D. B. and Dass, M. L. A., Growth of Epitaxial CoSi2 on <100> Silicon, MRS Symposium C, 5/27–6/1/92, vol. 260.+Silicon,+MRS+Symposium+C,+5/27–6/1/92,+vol.+260.>Google Scholar
13. Ostling, M., et al, The Influence of a TiN Cap Laver on a Titanium-Salicide Process: Titanium vs. Titanium Nitride/ Titanium., presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar
14. Levin, R. M. and Adams, A. C., “Low Pressure Deposition of Phosphosilicate Glass Films,” J. Electrochem. Soc., 129, 1588 (1982).CrossRefGoogle Scholar
15. Rastani, S. and Reisman, A., J. Electrochem. Soc. 137, 1288 (1990).Google Scholar
16. Blewer, R. S., Headley, T. J., and Tracy, M. E., in Proc, of Tungsten and other Refractory Metals for VLSI Applications III, ed. Wells, V. A. (MRS, Pittsburgh, PA, 1988) p. 155.Google Scholar
17. Murarka, S. P., Lecture notes at Metallization and Multilevel Metallization for VLSI and ULSI, Rensselaer Polytechnic Institute, August, 1991.Google Scholar
18. Raaijmakers, I. J., MOCVD TiN Barrier and Adhesion Layers for ULSI Applications, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar
19. Kaanta, C., Cote, W., Cronin, J., Lee, P., Wright, T., and Holland, K., IEDM Tech. Dig., p. 209 (1987).Google Scholar
20. Kaloyeros, A., State University of New York at Albany, NY, Private communication.Google Scholar
21. Learn, A. J., J. Electrochem. Soc., 123, 894 (1976).Google Scholar
22. Seidel, T. E. and Meek, R. L., in Third International Conference on Ion Implantation. Yorktown Heights, Plenum, New York, 1973.Google Scholar
23. Jain, A., et al, Kinetics of Chemical Vapor Deposition of Copper from CuL Precursors, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).CrossRefGoogle Scholar
24. Zheng, B., et al, Copper CVP for ULSI Applications, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar
25. Pai, C. S., Schumacher, J. C. Symposium, San Diego, CA, February 1992.Google Scholar
26. Webb, D., Sivaram, S., Stark, D., Bath, H., Draina, J., Leggett, R., and Tolles, R., Complete Intermetal Planarization using ECR Oxide and Chemical Mechanical Polish, VMIC Proceedings, 6/9–10/92, Lib. of Congress No. 89–644090, VMIC Cat. No. 92ISMIC-101.Google Scholar
27. Tragolo, J. A. and Rajan, K., Detection of Surface Response to Chemical/Mechanical Planarization of Planar Films, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar
28. Sivaram, S., Chemical Polishing of Oxides: Models for Removal Rate and Planarity, presented at the 1992 MRS Spring Meeting, San Francisco, CA, 1992 (unpublished).Google Scholar