Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T06:18:28.709Z Has data issue: false hasContentIssue false
  • English
  • Français

Manufacture of Submicron Light-Emitting Porous Silicon Areas for Miniature LEDs

Published online by Cambridge University Press:  15 February 2011

S. P. Duttagupta ,
C. Peng ,
L. Tsybeskov  and
P. M. Fauchet
S. P. Duttagupta
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
Get access

Abstract

We have investigated several methods to form submicron-size porous silicon regions. Porous silicon can emit light from the violet to past 1.5 μm with high photoluminescence efficiency at room temperature. It is composed of a high density of nanometer-scale crystalline silicon wires or dots. To integrate light-emitting porous silicon (LEPSi) LEDs with conventional Si microelectronics, it is necessary to produce miniature LEPSi regions adjacent to fully protected crystalline silicon regions. These techniques can be divided into two groups. In the first group formation of LEPSi is prevented during electrochemistry. Using optical and electron beam lithography, and a trilayer process with silicon nitride or amorphization by ion-implantation, we have made LEPSi patterns as small as 100 nm. In the second group, the formation of LEPSi during electrochemistry is enhanced by ion-milling or reactive ion-etching which we have found to help the pore nucleation. We have used a variety of mapping techniques, such as photoluminescence, atomic force and electron beam microscopies, to characterize the sharpness of the interface between the porous silicon and crystalline silicon regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 73
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Uhlir, A., Bell Syst. Tech. J., 35, 333 (1956).Google Scholar
2. Turner, D.R., J. Elec. Soc., 119, 351 (1972).Google Scholar
3. Smith, R.L. and Collins, S.D., J. Appl. Phys., 71, R1 (1992).Google Scholar
4. Yamana, M., J. Elec. Soc., 137, 2925 (1990).Google Scholar
5. Smith, R.L. and Collins, S.D., Sensors and Actuators A, 23, 829 (1990).Google Scholar
6. Stievenard, D. and Deresmes, D., Mat. Res. Soc. Symp. Proc., 358, 599 (1995).Google Scholar
7. C. Pickering et al., J. Phys. C: Solid State Physics, 17, 6535 (1984).Google Scholar
8. Canham, L. T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
9. Lehmann, V. and Gosele, U., Appl. Phys. Lett., 58, 856 (1991).Google Scholar
10. Koch, F. et al., Mat. Res. Soc. Symp. Proc., 283, 197 (1992).Google Scholar
11. Canham, L.T. et al., Appl. Phys. Lett., 61, 2563 (1992).Google Scholar
12. Tsybeskov, L. et al., Mat. Res. Soc. Symp. Proc., 358, 683 (1995).Google Scholar
13. Fauchet, P.M. et al., SPIE Proc., 2144, 34 (1994).Google Scholar
14. Barbour, J. C. et al., Appl. Phys. Lett., 59, 2088 (1991).Google Scholar
15. Doan, V.V. and Sailor, M.J., Appl. Phys. Lett., 60, 619 (1992).Google Scholar
16. Couillard, J.G. and Craighead, H.G., J. Vac. Sci. and Tech. B, 12, 161 (1994).Google Scholar
17. Bao, Xi-Mao and Yang, Hai-Qiang, Appl. Phys. Lett., 63, 2246 (1993).Google Scholar
18. Duttagupta, S.P. et al., Enhancement and suppression of the formation of porous silicon. To be published in J. Vac. Sci. Tech. B, May-June issue, 1995.Google Scholar
19. Duttagupta, S.P. et al., Mat. Res. Soc. Symp. Proc., 358, 647 (1995).Google Scholar
20. Lévy-Clément, C., J. Elec. Soc., 141, 958 (1994).Google Scholar
21. Wolf, and Tauber, ; Silicon Processing for the VLSI era Vol. 1; Lattice Press; Sunset Beach, California; 1986; Chp. 9.Google Scholar
22. Private Communication, Brian McIntyre, Institute of Optics, University of Rochester.Google Scholar
23. Peng, C. et al., Mat. Res. Soc. Symp. Proc., 298, 179 (1993).Google Scholar
24. Ravi, K. V.; Imperfections and Impurities in Semiconductor Silicon; John Wiley & Sons, Inc.; New York; 1981; p 197.Google Scholar
25. Chuang, S.F., Ph. D. dissertation, Massachusetts Institute of Technology, 1989.Google Scholar