Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-04T19:21:41.313Z Has data issue: false hasContentIssue false

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

Published online by Cambridge University Press:  31 January 2011

Neeraj Nepal
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, C/OMaterials Science and Engineering, 911 Partners Way, Raleigh, North Carolina, 27695, United States, 9195153072, (919)515-7724
M. Oliver Luen
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, 911 Partners Way, Engineering Building 1, Raleigh, North Carolina, 27695-7907, United States, 919-515-3072
Pavel Frajtag
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina, United States
John Zavada
Affiliation:
[email protected], United States
Salah M. Bedair
Affiliation:
[email protected], United States
Nadia El-Masry
Affiliation:
[email protected], United States
Get access

Abstract

We report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yamanouchi, M., Chiba, D., Matsukura, F., and Ohno, H., Nature 428, 539 (2004).Google Scholar
2 Ruster, C., Gould, C., Jungwirth, T., Sinova, J., Schott, G. M., Giraud, R., Brunner, K., Schmidt, G., and Molenkamp, L. W., Phys. Rev. Lett. 94, 027203 (2005).Google Scholar
3 Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).Google Scholar
4 Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., Roberts, J. C., and Bedair, S. M., Appl. Phys. Lett. 79, 3473 (2001).Google Scholar
5 Boguslawski, P. and Bernholc, J., Phys. Rev. B 72, 115208 (2005).Google Scholar
6 Bonanni, A., Semicond. Sci. Technol, 22, R41 (2007) and references therein.Google Scholar
7 Arkun, F. E., Reed, M. J., Berkman, E. A., Elmasry, N. A., Zavada, J. M., Reed, M. L., and Bedair, S. M., Appl. Phys. Lett. 85, 3809 (2004).Google Scholar
8 Han, B., Korotkov, R. Y., Wessels, B. W., and Ulmer, M. P., Appl. Phys. Lett. 84, 5320 (2004).Google Scholar
9 Korotkov, R. Y., Gregie, J. M., and Wessels, B. W., Appl. Phys. Lett. 80, 1731 (2002).Google Scholar
10 Graf, T., Gjukic, M., Brandt, M. S., Stutzmann, M., and Ambacher, O., Appl. Phys. Lett. 81, 5159 (2002).Google Scholar
11 Korotkov, R. Y., Gregie, J. M., and Wessels, B. W., Physics B, 308, 30 (2001).Google Scholar
12 Arkun, F. E., Mahros, A. M., El-Masry, N. A., Muth, J., Zhang, X., Zavada, J. M., and Bedair, S. M., MRS 955, 0955–I07 (2006).Google Scholar
13 Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., and Zavada, J. M., Appl. Phys. Lett. 90, 252503 (2007).Google Scholar
14 Nepal, N., Luen, M. Oliver, Zavada, J. M., Bedair, S. M., Frajtag, P., and El-Masry, N. A., Appl. Phys. Lett. 94, 132505 (2009).Google Scholar