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Manifestation of structural defects in photoluminescence from GaN

Published online by Cambridge University Press:  01 February 2011

M. A. Reshchikov ,
J. Jasinski ,
F. Yun ,
L. He ,
Z. Liliental-Weber  and
H. Morkoç
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
F. Yun
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284
L. He
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
H. Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284
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Abstract

Sharp peaks of unidentified nature are detected in the low-temperature photoluminescence (PL) spectrum of undoped GaN in the photon energy range between 3.0 and 3.46 eV. These PL lines are commonly attributed to excitons bound to yet unidentified structural defects. We analyzed X-ray diffraction data in a large set of GaN samples grown by molecular beam epitaxy in order to find any correlation between these unusual PL peaks and the GaN crystal structure. Moreover, in selected samples exhibiting such peaks, cross-sectional transmission electron microscopy was taken in an effort to detect the presence and density of various structural defects. The preliminarily results indicate that most of unusual PL lines in GaN (Y lines) are not directly related to the observed structural defects, such as edge, screw, mixed dislocations, or stacking faults. However, there exists the possibility that point defects trapped at dislocations or other structural defects are responsible for these PL lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.66
Copyright
Copyright © Materials Research Society 2004

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References

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