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Majority Carrier Transport Across Semiconductor Grain Boundaries

Published online by Cambridge University Press:  26 February 2011

S.F. Nelson ,
P.V. Evans ,
S.L. Sass  and
D.A. Smith
S.F. Nelson
Affiliation:
Dept. of Materials Science, Cornell University, Ithaca, NY 14853
P.V. Evans
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
S.L. Sass
Affiliation:
Dept. of Materials Science, Cornell University, Ithaca, NY 14853
D.A. Smith
Affiliation:
IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598
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Abstract

Majority carrier transport measurements were made across the potential barriers at (100) twist boundaries in silicon. The bicrystals were prepared by hot-pressing single crystals of lightly doped float-zone material, under ultra-high vacuum conditions. The current - voltage measurements were analyzed using combined drift-diffusion and thermionic emission transport mechanisms, and incorporating some inhomogeneity in the charge distribution at the boundary. Evidence has been found for a small, Nd = 3 × 1010 cm−2, density of mono-energetic defect states near midgap, in bicrystals characterized by a variety of misorientation angles. This density is too small to result from the intrinsic structure of the boundary. In addition, no dependence was found on misorientation angle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 415
Copyright
Copyright © Materials Research Society 1991

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References

[1] For an excellent review see Grovenor, C.R.M., J. Phys. C 18, 4079 (1985).Google Scholar
[2] Sutton, A.P., Inst. Phys. Conf. 104, 13 (1989)Google Scholar
[3] Martinuzzi, S., in Polycrystalline Semiconducdors, ed. by Moller, H.J., Strunk, H.P., and Werner, J.H., Springer-Verlag, Berlin (1989) p.148.CrossRefGoogle Scholar
[4] Tarnow, E., Arias, T., Bristowe, P.D., Dallot, P., Francis, G.P., Joannopoulos, J.D. and Payne, M.C., Phys. Rev. B 42, 3644 (1990).Google Scholar
[5] Pike, G.E. and Seager, C.H., J.Appl.Phys. 50, 3414 (1979).CrossRefGoogle Scholar
[6] Evans, P.V. and Nelson, S.F., to be published in J. App. Phys.Google Scholar
[7] Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).Google Scholar
[8] Simeonov, S.S., Phys. Rev. B 36, 9171 (1987).CrossRefGoogle Scholar
[9] Seager, C.H. and Pike, G.E., Appl. Phys. Lett. 39, 709 (1979).Google Scholar
[10] Petermann, G., Phys. Stat. Sol. (a) 106, 535 (1988).CrossRefGoogle Scholar
[11] Thomson, D.J. and Card, H.C., J. Appl. Phys. 54, 1976 (1983).CrossRefGoogle Scholar
[12] Mandurah, M. M., Saraswat, K.C. and Helms, C. R., J. Appl. Phys. 51, 5755 (1980).CrossRefGoogle Scholar
[13] Liehr, M., Renier, M., Wachnik, R.A., and Scilla, G. S., J. Appl. Phys. 61, 4619 (1987).Google Scholar