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Magneto-Transport Properties of Epitaxial Iron-Silicides

Published online by Cambridge University Press:  15 February 2011

S. Goncalves-Conto
Affiliation:
Laboratorium f¨r Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
N. Onda
Affiliation:
Laboratorium f¨r Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
H. Von Känel
Affiliation:
Laboratorium f¨r Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
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Abstract

The phase-breaking time τφ'. in thin α-FeSi2 films was obtained from the analyses of the lowtemperature magnetoresistance (MR). The films were grown by molecular beam epitaxy (MBE) on Si(111) and capped with epitaxial Si. The MR behavior is interpreted in terms of two-dimensional (2D) weak localization with strong spin-orbit interaction and electron-electron interaction (EEI). By fitting the MR data we obtained the temperature dependence of τφ. The results indicate the phase-breaking time to vary as T over a large temperature range from 1.7 to 15 K, in agreement with the dependence predicted by the EET in 2D systems.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

[1] Anderson, P. W., Abrahams, E. and Ramakrishnan, T. V., Phys. Rev. Lett. 43, 718 (1979).Google Scholar
[2] Bergmann, G., Z. Phys. B 48, 5 (1982).Google Scholar
[3] Fukuyama, H., J. Phys. Soc. Jpn. 50, 3407 (1981).Google Scholar
[4] Altshuler, B. L., Aronov, A. G., Lee, P. A., Phys. Rev. Lett. 44, 1288 (1980).Google Scholar
[5] Fukuyama, H., J.Phys. Soc. Jpn. 48,2169 (1980).Google Scholar
[6] Whiteaker, K. L., Robinson, I. K., Benson, C., Smilgies, D. M., Onda, N., and von Kanel, H., Phys. Rev. B 51, 9715 (1995).Google Scholar
[7] Chevrier, J., Stocker, P., Vinh, Le Thanh, Gay, J. M., and Derrien, J., Europhys. Lett. 22, 449 (1993).Google Scholar
[8] von Känel, H., Mat. Sci. Rep. 8, 193 (1992).Google Scholar
[9] Bergmann, G., Solid State Commun. 49,775 (1984).Google Scholar
[10] Bergmann, G., Phys. Rev. B 29,6114 (1984).Google Scholar
[11] Altshuler, B. L., Khmel'nitzkii, D., Larkin, A. I., and Lee, P. A., Phys. Rev. B 22, 5142 (1980).Google Scholar
[12] Radermacher, K., Monroe, D., White, A. E., Short, K. T., and Jebasinski, R., Phys. Rev. B 48, 8002 (1993).Google Scholar
[13] Altshuler, B. L., Aronov, A. G., and Khmelnistsky, D. E., J. Phys. C 15, 7367 (1982); Solid. State Commun. 39, 619 (1981).Google Scholar
[14] Larsen, K. Kyllesbech, van Hove, M, Lauwers, A., Maex, K. and van Rossum, M, Mat. Res. Soc. Proc. 320, 121 (1994).Google Scholar
[15] Abrikosov, A., and Gorkov, L. P., Soy. Phys. JETP 15,752 (1962).Google Scholar