Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T15:37:02.812Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetoresistance Effects in Granular Thin Layers Formed by High Dose Iron Implantation Into Silicon

Published online by Cambridge University Press:  10 February 2011

S.P. Wong  and
W.Y. Cheung
S.P. Wong
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin N.T., Hong Kong
W.Y. Cheung
Affiliation:
Department of Electronic Engineering & Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin N.T., Hong Kong
Get access

Abstract

High dose iron implantation into silicon substrates has been performed with a metal vapor vacuum arc ion source to doses ranging from 5×1016 to 2×1017 cm'2 at various beam current densities. The magnetoresistance (MR) effects in these implanted granular layers were studied at temperatures from 15K to 300K. A positive MR effect, i.e., an increase in the resistance at the presence of a magnetic field, was observed at temperatures lower than about 40K in samples prepared under appropriate implantation conditions. The magnitude of the MR effect, defined as ΔR/Ro ≡ (R(H)-Ro)/Ro where R(H) and Ro denote respectively the resistance value at a magnetic field intensity H and that at zero field, was found to depend not only on the implantation dose but also on the beam current density. This is attributed to the beam heating effect during implantation which affects the formation of the microstructures. The ratio δR/Ro was found to attain high values larger than 400% for some samples at low temperatures. The dependence of the MR effects on temperature, implantation dose, and beam current density will be presented and discussed in conjunction with results of transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 475: Symposium M – Magnetic Ultrathin Films, Multilayers, and Surfaces – 1997 , 1997 , 55
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Baibich, M.N., Broto, J.M., Fert, A., Nguyen Van Dau, F., Patroff, F., Etienne, P., Creuzet, G., Friederich, A., Chazelas, J., Phys. Rev. Lett. 61, 2472 (1988).Google Scholar
2. Xiao, J.Q., Jiang, J.S., Chien, C.L., Phys. Rev. Lett. 68, 3749 (1992).Google Scholar
3. Berkowitz, A.E., Mitchell, J.R., Carey, M.J., Young, A.P., Zhang, S., Spada, F.E., Parker, F.T., Hutten, A., Thomas, G., Phys. Rev. Lett. 68, 3745 (1992).Google Scholar
4. Parkin, S.S.P., Farrow, R.F.C., Rabedeau, T.A., Marks, R.F., Harp, G.R., Lam, Q.H., Toney, M., Savoy, R., Geiss, R., Euro. Phys. Lett. 22, 455 (1993).Google Scholar
5. Xiao, J.Q., Jiang, J.S., Chien, C.L., Phys Rev. B46, 9266 (1992).Google Scholar
6. Colinge, J.-P., SILICON-ON-INSULATOR TECHNOLOGY: MATERIALS TO VLSI, Kluwer Academic Pulishers, 1991.Google Scholar
7. Mantl, S., Nucl. Instr. and Meth. B84, 127 (1994).Google Scholar
8. Zhu, D.H., Chen, Y G, Liu, B.X., Nucl. Instr. and Meth. B101, 394 (1995).Google Scholar
9. Qicai Peng, Wong, S.P., Wilson, I.H., Wang, N., Fung, K.K., Thin Solid films 270, 573 (1995).Google Scholar
10. Yan, H., Kwok, W.M., Wong, S.P., Applied Surface Science 92, 61 (1996).Google Scholar
11. Yan, H., Kwok, R.W.M., Wong, S.P., Diamond and Related Materials 5, 556 (1996).Google Scholar
12. Qicai Peng and Wong, S.P., Mat. Res. Soc. Symp. Proc. Vol. 402, 487 (1996).Google Scholar
13. Qicai Peng, Wong, S.P., Xu, J.B., Wilson, I.H., Mat. Res. Soc Symp. Proc. Vol. 396, 763 (1996).Google Scholar
14. Brown, I.G., Gavin, J.E. and MacGill, R.A., Appl. Phys. Lett. 47, 358 (1985).Google Scholar
15. Brown, I.G. and Godechot, X., IEEE Trans. Plasma Sci., 19, 713 (1991).Google Scholar
16. Biersack, J.P. and Haggmark, L.G., Nucl. Instr. and Meth. 174, 257 (1980).Google Scholar