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Magnetoresistance and Hall Effect Near the Metal-Insulator Transition of Cd1-xMnxSe

Published online by Cambridge University Press:  26 February 2011

Y. Shapira*
Affiliation:
Francis Bitter National Magnet Laboratory and the Department of PhysicsMassachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

A large magnetoresistance was observed in n-type Cdl-xMnxSe (x ≤ 0.10) at low temperatures. The concomitant changes in the Half coefficient as a function of H were also studied. These magnetotransport effects are caused by the s-d interaction. Some specific magnetoresistance mechanisms are discussed. The most likely dominant mechanisms are related to the giant spin splitting of the conduction band.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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