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Magnetooptical Studies of Acceptors Confined in GaAs/AIGaAs Quantum Wells

Published online by Cambridge University Press:  22 February 2011

P.O. Holtz ,
Q.X. Zhao ,
B. Monemar ,
A. Pasquarello ,
M. Sundaram ,
J.L. Merz  and
A.C. Gossard
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, SWEDEN
Q.X. Zhao
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, SWEDEN
A. Pasquarello
Affiliation:
Institut Romand de Recherche Numérique en Physique des Matédriaux (IRRMA), PHB-Ecublens, CH-1015 Lausanne, Switzerland
M. Sundaram
Affiliation:
Center for Quantized Electronic Structures (QUEST), University of California at Santa Barbara, Santa Barbara, CA 93106, USA
J.L. Merz
Affiliation:
Center for Quantized Electronic Structures (QUEST), University of California at Santa Barbara, Santa Barbara, CA 93106, USA
A.C. Gossard
Affiliation:
Center for Quantized Electronic Structures (QUEST), University of California at Santa Barbara, Santa Barbara, CA 93106, USA
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Abstract

Magnetooptical studies have been performed on the shallow Be acceptor confined in the central region of narrow GaAs/AlGaAs quantum wells (QWs) with the magnetic field along the growth direction. The magnetic field dependence of the acceptor transition between the 1S(Г6) hh-like ground state and the excited hh-like 2S(Г6) state has been investigated by means of two independent techniques: Two-hole transitions of the acceptor bound exciton (BE) and resonant Raman scattering. The 1S(Г6) – 2S(Г6) transition energy as a function of the magnetic field has been measured for central acceptors in QWs of widths in the range 50 – 150 Å. The energy levels for the 1S ground states and 2S excited states of the confined acceptor with a magnetic field as a perturbation have also been calculated. These calculations predict a larger splitting between the mj=+3/2 and mj=−3/2 components of the acceptor 1S(Г6) ground state in comparison with the corresponding splitting of the excited 2S(Г6) state. The experimental results are in good agreement with the theoretical predictions derived without any fitting parameters. Furthermore, the Zeeman splitting of the acceptor BE emission has been measured and it is concluded that the J = 5/2 BE state is lowest in energy, similar to shallow acceptor BEs in bulk GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 73
Copyright
Copyright © Materials Research Society 1994

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