Hostname: page-component-669899f699-tpknm Total loading time: 0 Render date: 2025-04-26T00:09:18.402Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

Published online by Cambridge University Press:  10 February 2011

E. R. Glaser ,
T. A. Kennedy ,
A. E. Wickenden ,
D. D. Koleske  and
J. A. Freitas Jr.
E. R. Glaser
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, [email protected]
T. A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, [email protected]
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, [email protected]
D. D. Koleske
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, [email protected]
J. A. Freitas Jr.
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, [email protected]
Get access

Abstract

We have made an attempt to obtain electronic and atomic structure information on the residual defects that exist in high-resitivity GaN epitaxial layers from optically-detected magnetic resonance (ODMR) experiments performed on the broad 3.0 and 2.2 eV photoluminescence (PL) bands observed from these films. The first observation of magnetic resonance on this 3.0 eV band reveals two ODMR signals. The first resonance is sharp (FWHM ∼ 3.5 mT) with g ∼ 1.950 and is assigned to effective-mass (EM) donors based on previous studies. The second feature is much broader (FWHM ∼18 mT) with a donor-like g-value of ∼ 1.977. This new resonance may be associated with partially EM-like donor states located ∼ 54 - 57 meV below the conduction band edge proposed recently to be involved in this 3.0 eV PL band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 543
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Doverspike, K., Wickenden, A.E., Binari, S.C., Gaskill, D.K., and Freitas, J.A. Jr., Mat. Res. Soc. Symp. Proc. Vol. 395, 897 (1996) and references therein.Google Scholar
2. Smith, M., Chen, G.D., Li, J.Z., Lin, J.Y., Jiang, H.X., Salvador, A., Kim, W.K., Aktas, O., Botchkarev, A., and Morkoç, H., Appl. Phys. Lett. 67, 3387 (1995).Google Scholar
3. Binari, S.C., Electrochem. Soc. Proc. 95–21, 137 (1995).Google Scholar
4. Khan, M.A., Chen, Q., Yang, J.W., Shur, M.S., Dermott, B.T., and Higgins, J., IEEE Electron Device Lett. 17, 325(1996).Google Scholar
5. Freitas, J.A. Jr., Doverspike, K., and Wickenden, A., Mat. Res. Soc. Symp. Proc. Vol. 395, 485 (1996).Google Scholar
6. Kaufmann, U., Kunzer, M., Merz, C., Akasaki, I., and Amano, H., Mat. Res. Soc. Proc. Vol. 395, 633 (1996) and references therein.Google Scholar
7. Shan, W., Xie, X.C., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 67, 2512 (1995).Google Scholar
8. Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A. Jr., Asif Khan, M., Olson, D.T., Kuznia, J.N., and Wickenden, D.K., Phys. Rev. B 51, 13326 (1995) and references therein.Google Scholar
9. Glaser, E.R., Kennedy, T.A., Brown, S.W., Freitas, J.A. Jr., Perry, W.G., Bremser, M.D., Weeks, T.W., and Davis, R.F., Mat. Res. Soc. Proc. Vol. 395, 667 (1996).Google Scholar
10. Hofmann, D.M., Kovalev, D., Steude, G., Volm, D., Meyer, B.K., Xavier, C., Monteiro, T., Pereira, E., Mokov, E.N., Amano, H., and Akasaki, I., Mat. Res. Soc. Proc. Vol. 395, 619 (1996).Google Scholar
11. Mason, P.W., Watkins, G.D., and Doernen, A., in Proceedings of the 1996 Fall Meeting of the Materials Research Society, ni-V Nitrides, to be published.Google Scholar
12. Dingle, R. and Ilegems, M., Solid State. Commun. 9, 175 (1971).Google Scholar
13. Koschnick, F.K., Michael, K., Spaeth, J.-M., Beaumont, B., and Gibart, P., Phys. Rev. B 54, R11042 (1996).Google Scholar