Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T01:34:04.339Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic and optical properties of Mn-doped SnO2 films

Published online by Cambridge University Press:  19 August 2014

S.Sujatha Lekshmy ,
V.S Anitha  and
K. Joy
S.Sujatha Lekshmy
Affiliation:
Thin film Lab, Post Graduate and Research Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015.
V.S Anitha
Affiliation:
Thin film Lab, Post Graduate and Research Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015.
K. Joy*
Affiliation:
Thin film Lab, Post Graduate and Research Department of Physics, Mar Ivanios College, Thiruvananthapuram 695015.
*
*Corresponding author e-mail: [email protected]
Get access

Abstract

Magnetic nanoparticles have drawn much attention due to their potential in magnetic recording as well as many biological and medical applications such as magnetic separation, hyperthermia treatment, magnetic resonance contrast enhancement and drug delivery. The magnetic fields generated by these nanoparticles can be used for diagnostics in Magnetic Resonance Imaging (MRI) etc. Manganese doped tin dioxide (SnO2:Mn) possess interesting physical and chemical properties. The physical and chemical properties of the particles themselves like the size, shape, crystallinity and composition, will control the magnetic properties and response of the particles to magnetic fields. Our work is rooted to control the properties of the particles as well as tailor their magnetic properties for specific applications. In this study, SnO2: Mn films with different Mn doping concentrations (0-3 mol%) were deposited on the glass substrates by sol-gel dip coating technique. XRD patterns shows tetragonal structure for all the SnO2:Mn films and crystallite size decreased as Mn doping concentration increased from 0 - 3 mol%. The magnetic property shows that pure SnO2 film is diamagnetic and 1- 3 mol% SnO2:Mn films posses room temperature ferromagnetism. The optical properties of the films revealed that transmittance of the films decreased with increase in Mn doping concentration. The optical energy band gap values (3.55 eV-3.71 eV) increased with the increase in Mn doping concentrations. Such SnO2:Mn films with structural, optical and magnetic properties can be used as dilute magnetic semiconductors.

Keywords

x-ray diffraction (XRD)magnetic propertiesthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials— Thin Films and Nanostructures , 2014 , pp. 113 - 119
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Wolf, S. A., Awschalom, D. D., Buhrman, R. A., Daughton, J. M., Von Molnar, S., Roukes, M. L., Chtchelkanova, A. Y., and Treger, D. M., Science 294(5546) 1488–1495 (2001).CrossRefGoogle Scholar
Erwin, S.C., Zu, L., Haftel, M.I., Efros, A.L., Kennedy, T.A., Norris, D.J., Nature 436(03832) 91–95 (2005).CrossRefGoogle Scholar
Norris, D.J., Efros, A.L., Erwin, S.C., Science 319(5871) 1776–1779 (2008).CrossRefGoogle Scholar
Gu, Feng, Fen Wang, Shu, Kai Lu, Meng, Jun Zhou, Guang, Xu, Dong and Yuan, Duo Rong J. Phys. Chem. B, 108(35) 8119–8123(2004). .CrossRefGoogle Scholar
Sujatha Lekshmy, S., Daniel, Georgi P., Joy, K., “Microstructure and physical properties of sol gel derived SnO2: Sb thin films for optoelectronic applications” Applied Surface Science 274, 95– 100 (2013).CrossRefGoogle Scholar
Swanepoel, R J Phys E: Sci Instrum 16:1214 (1983).CrossRefGoogle Scholar
Bagheri-Mohagheri, M. M. and Shokooh-Saremi, M. Semicond. Sci. Tecnol. 19 [6] 764 – 769 (2004).CrossRefGoogle Scholar
Cullity, BD, Stock, SR, 3rd edn. Prentice Hall, Upper Saddle River, p 388 (2001).Google Scholar
Sundaresan, A, Bhargavi, R, Rangarajan, N, Siddesh, U, Rao, CNR Phys Rev B 74:161306 (2006)CrossRefGoogle Scholar
Coey, J. M. D., Douvalis, A. P., Fitzgerald, C. B., and Venkatesan, M. Appl. Phys. Lett. 84(8) 1332–1343(2004).CrossRefGoogle Scholar
Kimura, H., Fukumura, T., Kawasaki, M., Inaba, K., Hasegawa, T., and Koinuma, H. Appl. Phys. Lett. 80(1) 94–97 (2002)CrossRefGoogle Scholar
Ghodsi, F.E., Mazloom, J, Appl Phys A 108 693–700(2012).CrossRefGoogle Scholar
Wood, DL, Tauc J Phys Rev B 5:3144–3151(1972).CrossRefGoogle Scholar
Valle, GG, Hammer, P, Pulcinelli, SH, Santilli, CV J. Eur. Ceram. Soc 24:1009–1013 (2004).CrossRefGoogle Scholar